在不同本底真空和工作气压下制备了Ta/Ni81Fe19薄膜,并进行了磁性测量和原子力显微镜分析.结果表明较高的本底真空和较低的工作气压下制备的薄膜有较大的各向异性磁电阻值ΔR/R.其原因是高本底真空和低工作气压导致大晶粒尺寸和低粗糙度,进而降低电子的散射,减小电阻R,增大各向异性磁电阻ΔR/R.在不同真空度下制备了(Ni81Fe19)64Cr36/Ni81Fe19薄膜,与以Ta为衬底的薄膜相比,具有更大的各向异性磁电阻值,达到了3.2%,这是国内目前报道的最大值,但它受真空度的影响更大.
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