采用等离子体辅助直流弧光放电技术,以Si粉和SiO2粉为反应原料,制备了不同形貌的超细Si/SiOx纳米线和纳米花.通过X射线衍射(XRD)、透射电子显微镜(TEM)、能量色散X射线光谱(EDS)对Si/SiOx纳米线的形貌和组分进行表征与分析.Si/SiOx纳米线紫外可见吸收光谱证实了样品的光学带隙为4.58 eV.Si/SiOx纳米线光致发光光谱(PL)表明其在305 nm、495 nm处有较强的发光峰,具有良好的发光性能.
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