以模板效应为手段, 在单晶Si--(100)基片上借助预先沉积的Mo膜成功制备出共格 生长的α--W薄膜. 用X射线衍射、场发射扫描电镜和高分辨透射电镜分析薄膜微结构, 用偏 振相位移技术分析残余应力, 用四点探针技术分析电阻率. 结果表明: Mo模板诱导下共格生 长出的α--W膜为等轴晶, Si基底上则为亚稳态β--W的非等轴晶. 两组样品的电 阻率和残余应力均随膜厚降低而升高, 但β--W膜归因于晶粒尺寸减小, 即晶界的大量增加; 而β--W/Mo双层膜归因于两者之间共格界面的约束作用, 当膜厚减至数十纳米后尤其如此.
By means of template effect α-W thin films were successfully coherent grown on pre-deposited Mo seed-layer on Si substrates at ambient temperature by magnetron sputtering. Microstructures have been studied by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy techniques. Residual stress and electric resistance of thin films were investigated by wafer curvature method and standard four-probe technique. Observations show stable α-W in equiaxial-grain shape is preferred on Mo layer driven by template effect while metastable β-W with non-equiaxed grain structure appears to form on Si substrates. With increasing tungsten film thickness, resistivity and residual stress increase for above two series of samples. For the case of β-W, the thickness dependent properties indeed resulted from increasing grain boundary. Whereas, for α-W case, the constraint of coherent interface between α-W and Mo will dominate electric resistance and residual compressive stress, especially at film thicknesses equal to or smaller than tens of nanometers.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%