采用基于有限元的数值模拟方法,研究了VHF-PECVD法制备微晶硅薄膜的等离子体放电和气相反应过程,模拟了放电功率对等离子体特性及气相化学的影响,并与光发射谱(OES)在线监测结果进行了比较.模拟结果表明:当放电功率从30 W增大至70W时,等离子体中心区域的电子温度t基本保持不变,电子浓度ne和等离子体电势Φ线性增大;气相中H和SiH3等基元浓度逐渐增大,二者的浓度比nH/nSiH3亦随功率单调增大,模拟结果与OES测量结果吻合的很好.最后,根据数值模拟结果,对实验上不同放电功率下微晶硅薄膜的生长特性进行了解释.
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