采用基于有限元的数值模拟方法,研究了VHF-PECVD法制备微晶硅薄膜的等离子体放电和气相反应过程,模拟了放电功率对等离子体特性及气相化学的影响,并与光发射谱(OES)在线监测结果进行了比较.模拟结果表明:当放电功率从30 W增大至70W时,等离子体中心区域的电子温度t基本保持不变,电子浓度ne和等离子体电势Φ线性增大;气相中H和SiH3等基元浓度逐渐增大,二者的浓度比nH/nSiH3亦随功率单调增大,模拟结果与OES测量结果吻合的很好.最后,根据数值模拟结果,对实验上不同放电功率下微晶硅薄膜的生长特性进行了解释.
参考文献
[1] | Hiromu Takatsuka;Matsuhei Noda;Yoshimichi Yonekura;Yoshiaki Takeuchi;Yasuhiro Yamauchi .Development of high efficiency large area silicon thin film modules using VHF-PECVD[J].Solar Energy,2004(6):951-960. |
[2] | Fukawa M.;Guo LH.;Kondo M.;Matsuda A.;Suzuki S. .High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):217-223. |
[3] | Kondo M. .Microcrystalline materials and cells deposited by RF glow discharge[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2003(1/4):543-566. |
[4] | Satake K;Kobayashi Y .Modeling of microcrystalline silicon film deposition in a capacitively coupled radio-frequency plasma reactor[J].Journal of Applied Physics,2005(2):3308-1-3308-14-0. |
[5] | Kessels WMM;Nadir K;van de Sanden MCM .SiHx film growth precursors during high-rate nanocrystalline silicon deposition[J].Journal of Applied Physics,2006(7):76110-1-76110-3-0. |
[6] | Nunomura S;Kondo M .Characterization of high-pressure capacitively coupled hydrogen plasmas[J].Journal of Applied Physics,2007(9):93306-1-93306-7-0. |
[7] | Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure[J].Journal of Applied Physics,2003(6):3198-3206. |
[8] | X.D. Zhang;F.R. Zhang;E. Amanatides;D. Mataras;Y. Zhao .Modeling and experiments of high-pressure VHF SiH_4/H_2 discharges for higher microcrystalline silicon deposition rate[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(20):6829-6833. |
[9] | 李艳阳,杨仕娥,陈永生,周建朋,李新利,卢景霄.甚高频电容耦合氢等离子体特性研究[J].物理学报,2012(16):335-341. |
[10] | HE Bao-hua,YANG Shi-e,CHEN Yong-sheng,LU Jing-xiao.Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD[J].光电子快报(英文版),2011(03):198-201. |
[11] | Lee I;Graves DB;Lieberman MA .Modeling electromagnetic effects in capacitive discharges[J].Plasma Sources Science & Technology,2008(1):15018-1-15018-16-0. |
[12] | Wu ZM;Sun J;Lei QS;Zhao Y;Geng XH;Xi JP .Analysis. on pressure dependence of microcrystalline silicon by optical emission spectroscopy[J].Physica, E. Low-dimensional systems & nanostructures,2006(1):125-129. |
[13] | Morral AFI.;Cabarrocas PRI.;Bertomeu J. .The role of hydrogen in the formation of microcrystalline silicon[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(0):559-563. |
[14] | Tabata A;Fukaya K;Mizutani T .Influence of substrate direct current bias voltage on microcrystalline silicon growth during radio-frequency magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2008(8):777-781. |
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