以SnCl4·5H2O、In和浓盐酸为原料,采用化学共沉淀法制备出了纳米级锡掺杂氧化铟(ITO)导电微粉,系统地研究了掺杂量,共沉淀温度,pH值,热处理时间、温度对粉体粒度、形貌和电性能的影响规律.研究表明,合成的ITO粉体分散性较好、导电性能优异,粒径在40nm左右具有立方铁锰矿结构.在ITO纳米导电粉的制备过程中,共沉淀温度和滴定终点pH值对其形貌和性能有很大影响,当共沉淀温度在60℃左右,pH=6时制得的粉体性能最佳.煅烧条件对粉体的形貌、粒度和导电性也有较大的影响,在700℃,4h条件下可以制得导电性能良好,结晶完好,粒度分布均匀的ITO粉体.掺入Sn(Ⅳ)的量对载流子的迁移率有很大的影响,在掺杂浓度为10%左右可制得导电性极佳的纳米ITO粉体.
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