采用磁控溅射法,以ITO/Glass为衬底,制备了具有电阻转变特性的HfO2薄膜.X射线光电子能谱(XPS)分析发现,薄膜中的Hf、O元素不成化学计量比,薄膜中可能存在大量氧空位.电学测试结果表明,HfO2薄膜表现出明显的双极电阻转变特性,并且表现出良好的可靠性(室温下可重复测试102次以上)和稳定的保持性能(0.5 V偏压下保持104 s以上),高低阻态比值达到104.基于XPS以及电学分析,薄膜的导电过程可用与氧空位相关的空间电荷限制电流模型解释.
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