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综述了近年来国内外GaN薄膜制备技术的研究进展,并重点介绍了其发展历程、所使用的设备和技术、各自的优缺点及应用前景.通过比较这些技术的优缺点展望了制备GaN薄膜技术的发展前景.

参考文献

[1] Monemar B;Pozina G .Group Ⅲ-nitride based hetero and quantum structures[J].Progress in Quantum Electronics,2000,24:239.
[2] Conway A M;Asbeek P M;Moon J S et al.Accurate thermal analysis of GaN HFETs[J].Solid-State Electronics,2008,52:637.
[3] Lee S N;Paek H S;Ryu H Y et al.Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire[J].Journal of Crystal Growth,2007,298:695.
[4] Lee, J;Kim, DH;Kim, J;Jeon, H .GaN-based light-emitting diodes directly grown on sapphire substrate with holographically generated two-dimensional photonic crystal patterns[J].Current applied physics: the official journal of the Korean Physical Society,2009(3):633-635.
[5] Johnson W C;Parsons J P;Rrew M C .Nitrogen compounds of gallium Ⅲ-gallic nitride[J].Journal of Physical Chemistry,1932,36:2651.
[6] 王连红,梁建,马淑芳,刘旭光,许并社.CVD法制备硅基氮化镓薄膜[J].发光学报,2008(01):152-155.
[7] Li W;Chen J F;Wang T .Study of GaN adsorption on the Si surface[J].Applied Surface Science,2009,256:191.
[8] Mohapatra D R;Rai P;Misra A et al.Parameter window of diamond growth on GaN films by microwave plasma chemical vapor deposition[J].Diamond and Related Materials,2008,17:1775.
[9] Goldys EM.;Langer R.;Barski A.;Godlewski M. .Surface morphology of cubic and wurtzite GaN films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(2/3):143-149.
[10] Deb B;Chaudhuri S;Pal A K .Hexagonal GaN films deposited by reactive hot wall evaporation technique[J].Materials Letters,2002,53:68.
[11] Yasui K.;Kanauchi K.;Akahane T. .Growth of c-GaN films on GaAs(100) using hot-wire CVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):178-181.
[12] Matsumura H;Umemoto H;Masuda A .Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous silicon[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2004(0):19-26.
[13] Komae Y;Saitou T;Suemitsu M et al.The growth of GaN films by alternate source gas supply hot-mesh CVD method[J].Thin Solid Films,2009,517:3528.
[14] Maruska H P;Tietjen J J .The preparation and properties of vapor-deposited single-crystal-line GaN[J].Applied Physics Letters,1969,15:327.
[15] 贾婷婷,林辉,滕浩,侯肖瑞,王军,周圣明.异质衬底上HVPE法生长GaN厚膜的研究进展[J].人工晶体学报,2009(02):501-505.
[16] Yang CC.;Lee CH.;Chi GC.;Wu MC. .X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method[J].Journal of Crystal Growth,1999(1/2):8-14.
[17] Williams AD;Moustakas TD .Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire[J].Journal of Crystal Growth,2007(1):37-41.
[18] Cao X C;Xu D L;Guo H M et al.The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy[J].Thin Solid Films,2009,517:2088.
[19] 马平,魏同波,段瑞飞,王军喜,李晋闽,曾一平.蓝宝石衬底上HVPE-GaN厚膜生长[J].半导体学报,2007(06):902-908.
[20] Mahadik NA;Qadri SB;Rao MV .Double-crystal x-ray topography of freestanding HVPE grown n-type GaN[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(2/4):233-237.
[21] Kwona H Y;Moon J Y;Choi Y J et al.Initial growth behaviors of GaN layers overgrown by HVPE on one-dimensional nanostructures[J].Materials Science and Engineering,2010,166:28.
[22] Nouet G;Ruterana P;Chen J et al.Characterization of thick HVPE GaN films[J].Superlattices and Microstructures,2004,36:417.
[23] Paskova T;Darakchieva V;Paskov P et al.Properties of nonpolar a-plane CaN films grown by HVPE with AlN buffers[J].Journal of Crystal Growth,2005,281:55.
[24] Lin C T;Yu G H;Wang Z X et al.Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN tamplate[J].Materials Letters,2009,63:943.
[25] 彭冬生,冯玉春,牛憨笨,刘晓峰.预处理蓝宝石衬底上生长高质量 GaN 显示薄膜[J].电子器件,2008(01):57-60.
[26] Hassan Z.;Lee YC.;Yam FK.;Abdullah MJ.;Ibrahim K.;Kordesch ME. .Microcrystalline GaN film grown on Si(100) and its application to MSM photodiode[J].Materials Chemistry and Physics,2004(2/3):369-374.
[27] Tomar MS.;New C.;Kuenhold KA.;Rutherford R. .Growth of InGaN and GaN films by photoassisted metalorganic chemical vapor deposition[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2000(4):437-443.
[28] Roqan I S;Nogales E;O'Donnell K P et al.The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE[J].Journal of Crystal Growth,2008,310:4069.
[29] Kim E;Rusakova I;Berishev I et al.GaN thin film growth on GaAs(001)by CBE and plasma-assisted MBE[J].Journal of Crystal Growth,2002,243:456.
[30] Chuah L S;Hassan Z;Hassan H A et al.CaN Schottky barrier photodiode on Si(111)with low-temperature-grown caplayer[J].Journal of Alloys and Compounds,2009,481:L15.
[31] Gerlach J W;Hofmann A;Hoche T et al.Control of the crystalline quality of wurtzitic GaN films deposited on γ-Li-AlO2 by ion-beam assisted molecular-beam epitaxy[J].Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,2007,257:315.
[32] Chen, CH;Aballe, L;Klauser, R;Kampen, TU;Horn, K .Valence band discontinuity at the GaN/SiC(0001) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy[J].Journal of Electron Spectroscopy and Related Phenomena,2005(0):425-428.
[33] Shen X Q;Shimizu M;Yamamoto T et al.Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire(0001)substrates[J].Journal of Crystal Growth,2009,311:2049.
[34] 张敬尧,李玉国,崔传文,张月甫,卓博世.Si基GaN薄膜的制备方法及结构表征[J].微纳电子技术,2008(04):240-244.
[35] 吴玉新,薛成山,庄惠照,田德恒,刘亦安,何建廷.电泳沉积法制备GaN薄膜的结构和组分分析[J].功能材料,2006(09):1420-1422.
[36] Wang R P;Muto H;Kusumori T .Growth of c-axis oriented GaN films on quartz by pulsed laser deposition[J].Optical Materials,2003,23:15.
[37] Premchander P;Manoravi P;Joseph M;Baskar K .Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition[J].Journal of Crystal Growth,2005(3/4):363-367.
[38] Tsuchiya Y;Kobayashi A;Ohta J;Fujioka H;Oshima M .Heteroepitaxial growth of GaN on atomically flat LiTaO3(0001) using low-temperature AIN buffer layers[J].Journal of Crystal Growth,2006(1):22-26.
[39] Mahony D O;Lunney J G;Tobin G et al.Pulsed laser deposition of manganese doped GaN thin films[J].Solid-State Electronics,2003,47:533.
[40] Sangulno, P;Schwarz, R;Wilhelm, M;Kunst, M;Teodoro, O .Morphology and composition of GaN films grown by cyclic-pulsed laser deposition[J].Vacuum,2007(11/12):1524-1528.
[41] Xiao, HD;Liu, R;Liu, JQ;Lin, ZJ;Mei, LM .Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2009(11):1393-1396.
[42] Zou CW;Wang HJ;Yin ML;Li M;Liu CS;Guo LP;Fu DJ;Kang TW .Preparation of GaN films on glass substrates by middle frequency magnetron sputtering[J].Journal of Crystal Growth,2009(2):223-227.
[43] Zhang C G;Chen W D;Bian L F et al.Preparation and characterization of CaN films by radio frequency magnetron sputtering and carbonized-reaction technique[J].Applied Surface Science,2005,252:2153.
[44] Kikuma T;Tominaga K;Furutani K et al.GaN film deposited by planar magnetron sputtering[J].Vacuum,2002,66:233.
[45] Yudate S;Sasaki R;Kataoka T et al.Growth condition dependence of photohaninescence of Eu-doped CaN films prepared by radio frequency magnetron sputtering[J].Optical Materials,2006,28:742.
[46] 丁咚,阴明利,邹长伟,郭立平,付德君.中频磁控溅射制备GaN薄膜[J].核技术,2008(07):515-518.
[47] 童杏林,罗梦泽,姜德生,刘忠明.GaN薄膜制备及脉冲激光沉积法的研究进展[J].激光杂志,2006(01):5-7.
[48] Sinha G;Adhikary K;Chaudhuri S .Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol-gel process[J].Applied Surface Science,2008,254:5257.
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