针对以往电子俘获光存储材料存在的问题,利用高温固相反应发制备了一种Eu2+ 掺杂的氟氧化物玻璃陶瓷,研究表明在该材料中具有光激励发光 (PSL) 特性,并可用于电子俘获光存储.XRD分析表明该材料含有大量的BaF2微晶.根据其与BaF2相似的发光特性,推断玻璃陶瓷的PSL有可能来源于微晶中Eu2+ 的5d-4f发射.但是决定光激励发光过程中的电子(空穴)陷阱的存在方式、 电子迁移途径都有待进一步探讨的问题.与传统的BaFCl∶Eu相比,这种材料的光激励发光衰减速度较慢.
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