低温高压快速生长纳米晶硅薄膜中氢的作用

功能材料, 2008, 39(11): 1839-1842.

低温高压快速生长纳米晶硅薄膜中氢的作用

邱胜桦 ^1, , 陈城钊 ^2, , 刘翠青 ^3, , 吴燕丹 ^4, , 李平 ^5, , 林璇英 ^6, , 黄翀 ^7, , 余楚迎 ^8,

1.韩山师范学院,物理与电子工程系,广东,潮州,521041

2.韩山师范学院,物理与电子工程系,广东,潮州,521041

3.韩山师范学院,物理与电子工程系,广东,潮州,521041

4.韩山师范学院,物理与电子工程系,广东,潮州,521041

5.韩山师范学院,物理与电子工程系,广东,潮州,521041

6.韩山师范学院,物理与电子工程系,广东,潮州,521041;汕头大学,物理系,广东,汕头,515063

7.汕头大学,物理系,广东,汕头,515063

8.汕头大学,物理系,广东,汕头,515063

基金项目: 韩山师范学院校科研和教改项目(FC200508) 韩山师范学院校科研和教改项目(0503)

关键词：纳米晶硅薄膜 , 氢稀释 , 晶化率 , RF-PECVD

The effect of hydrogen on in nano-crystalline thin films prepared at with low temperature and high pressure and fast growth

以SiH4/H2为气源,用PECVD沉积技术,在低温(200℃)、高压下(230Pa)下制备出优质纳米晶硅薄膜.研究氢在高速生长纳米晶硅薄膜材料中的作用.实验表明,氢对纳米晶硅薄膜的高速生长起到非常关键的作用.随着氢稀释率由95%提高至99%,薄膜的晶化率由30%增大到70%,晶粒尺寸由3.0nm增大至6.0nm,而沉积速率却由0.8nm/s降低至0.3nm/s.

参考文献

[1]	Graf U.;Meier J.;Kroll U.;Bailat J.;Droz C.;Vallat-Sauvain E.;Shah A. .High rate growth of microcrystalline silicon by VHF-GD at high pressure[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):37-40.
[2]	Fukawa M.;Guo LH.;Kondo M.;Matsuda A.;Suzuki S. .High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):217-223.
[3]	Guo L .[J].Japanese Journal of Applied Physics,1998,37:L1116.
[4]	Rath JK. .Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications [Review][J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2003(4):431-487.
[5]	Zhu M;Guo X;Chen G et al.[J].Thin Solid Films,2000,360:205.
[6]	Biebericher A C W;Van der Weg W F;Rath J K .[J].Journal of Vacuum Science and Technology,2003,A21:156.
[7]	Lin X Y;Wang H;Yu Y P et al.[J].Chinese Physics Letters,1994,11:165-167.
[8]	Lin X Y;Lin K X;Yu Y P.Infrared Anolysia on Hydrogen Content and Si-H Bonding Configurations of Hydrogenated Amorphous Silicon Films[A].United States of American,1994:638.
[9]	LinXY;Huang C J;Lin K C et al.[J].Acta Physica Sinica,2004,53:1558.
[10]	Lin X Y;Huang C J;Lin K C et al.[J].Chinese Physics Letters,2003,20:1879.
[11]	Droz C;Vallat-Sauvain E;Bailat J;Feitknecht L;Meier J;Shah A .Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2004(1):61-71.
[12]	罗志,林璇英,林舜辉,余楚迎,林揆训,余云鹏,谭伟锋.氢化非晶硅薄膜中氢含量及键合模式的红外分析[J].物理学报,2003(01):169-174.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网