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从分子动力学理论出发,推导出垂直式MOCVD反应器中热泳力和热泳速度与温度、温度梯度、压强、粒子直径的关系式,以及热泳速度与扩散速度、动量速度平衡时的关系式.在典型的生长条件下,计算得到在温度T=605K时,热泳速度与扩散速度、动量速度动量平衡,TMGa浓度达到最大.然后在不考虑化学反应和考虑化学反应两种情况下,针对垂直式MOCVD反应器内的热泳力对粒子浓度分布和沉积的影响进行数值模拟,模拟给出反应粒子在反应器不同进口温度、衬底温度时的温度分布、浓度分布和反应速率.并与文献中的实验值进行对比,模拟结果与实验值有很好的吻合.

参考文献

[1] Jayaraj S .Finite Difference Modeling of Natural Convection Flow with Thermophoresis[J].International Journal of Numercal Methods for Heat & Fluid Flow,1999,9(06):692-704.
[2] Goren S L .Thermophoresis of Aerosol Particles in the Laminar Boundary Layer on A Flat Plate[J].Journal of Colloid and Interface Science,1977,61(01):77-85.
[3] Homay G M;Geyling F T;Walker K L .Blasius Sries for Termophoretic Deposition of Small Particles[J].Journal of Colloid and Interface Science,1981,83(02):495-501.
[4] Epstein M;Houser G M;Henry R E .Thermophoretic Deposition of Particles in Natural Convection Flow from a Vertical Plate[J].Journal of Heat Transfer,1985,107(02):272-276.
[5] Eversteyn F C;Severin P J et al.A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor[J].Journal of the Electrochemical Society,1970,117(07):925-931.
[6] Fotiadis D I .Thermophoresis of Solid Particles in Horizontal Chemical Vapor Depositon Reactors[J].Journal of Crystal Growth,1990,102(04):743-761.
[7] E.V. Yakovlev;R.A. Talalaev;A.S. Segal;A.V. Lobanova;W.V. Lundin;E.E. Zavarin;M.A. Sinitsyn;A.F. Tsatsulnikov;A.E. Nikolaev .Hydrogen Effects In Ⅲ-nitride Movpe[J].Journal of Crystal Growth,2008(23):4862-4866.
[8] Jasik A;Wnuk A;Gaca J .The Influence of the Growth Rate and V/Ⅲ Ratio on The Crystal Quality of InGaAa/GaAs QW Structures Grown by MBE and MOCVD Methods[J].Journal of Crystal Growth,2009,311(19):4423-4432.
[9] Guarneros, C;Sanchez, V .GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(10):1187-1190.
[10] J. Randall Creighton;George T. Wang;Michael E. Coltrin .Fundamental chemistry and modeling of group-Ⅲ nitride MOVPE[J].Journal of Crystal Growth,2007(0):2-7.
[11] Theodoropoulos C.;Moffat HK.;Han J.;Mountziaris TJ. .Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2000(1/2):65-81.
[12] 左然,李晖.MOCVD反应器的最佳输运过程及其优化设计[J].半导体学报,2008(06):1164-1171.
[13] Parikh RP;Adomaitis RA .An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system[J].Journal of Crystal Growth,2006(2):259-278.
[14] Fahmy M H;Monamed S E.The Measurements of Thermophoretic Deposition of Aerosol Particles in the Continuum and Slip Flow Regions[J].J King Spud Univ,1989(01):229-238.
[15] Atkins P W.Physical Chemistry[M].Beijing:Beijing Higher EducationPress,2006
[16] Welty J R;Wicks G E;Wilson C E.Fundamentals of Momentum,Heat and Mass Transfer[M].American:John Wiley and Sons,Inc,2005
[17] Li Hui.Mass transport analysis of a showerhead MOCVD reactor[J].半导体学报,2011(03):37-41.
[18] 于海群,左然,陈景升,彭鑫鑫.MOCVD水平式反应器中热泳力对沉积过程中反应前体浓度分布的影响分析及数值模拟[J].人工晶体学报,2011(04):1033-1038.
[19] 王国斌,左然,徐谦,李晖,于海群,陈景升.切向喷射式MOCVD反应器的设计与数值模拟[J].人工晶体学报,2010(01):267-271.
[20] 彭鑫鑫,左然,于海群,陈景升.多片式热壁 MOCVD 反应器的设计与数值模拟分析[J].人工晶体学报,2011(01):207-212.
[21] Sengupta D;Mazumder S;Kuykendall W;Lowry SA .Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth[J].Journal of Crystal Growth,2005(3/4):369-382.
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