ZnO基稀磁半导体材料研究进展

材料导报, 2007, 21(12): 106-109.

ZnO基稀磁半导体材料研究进展

周勋 ^1, , 沈益斌 ^2, , 段满益 ^3, , 徐明 ^4, , 令狐荣锋 ^5,

1.贵州大学电信学院,贵阳,550025;贵州师范大学理学院,贵阳,550001;四川师范大学物理与电子工程学院&固体物理研究所,成都,610068

2.贵州师范大学理学院,贵阳,550001;四川师范大学物理与电子工程学院&固体物理研究所,成都,610068

3.四川师范大学物理与电子工程学院&固体物理研究所,成都,610068

4.贵州师范大学理学院,贵阳,550001;四川师范大学物理与电子工程学院&固体物理研究所,成都,610068

5.贵州师范大学理学院,贵阳,550001

基金项目: 贵州省科学技术基金(黔科通J合[2006]2004)

关键词： ZnO , 稀磁半导体 , 铁磁序 , 反铁磁序 , 电子结构

Research Development of ZnO-based Diluted Magnetic Semiconductor Materials

随着铁磁性半导体(如Mn掺杂InAs和GaAs)的发现,稀磁半导体(DMS)近来吸引了众多研究者的目光.传统半导体不具有磁性,而稀磁半导体可以在不改变传统半导体其它性质的情况下引入磁性,具有良好的物理化学性能.从实验和理论计算两个方面总结了ZnO基DMS的国内外研究现状,讨论了各种生长方法、基底选择、生长温度对材料磁性的影响,总结了如何通过改变实验条件来增大饱和磁化强度及提高Curie温度.

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ZnO基稀磁半导体材料研究进展

Research Development of ZnO-based Diluted Magnetic Semiconductor Materials

参考文献