采用射频磁控共溅射法制备了纳米GaAs-SiO2镶嵌复合薄膜.通过X射线衍射、透射电镜和X射线光电子能谱等手段研究了薄膜的结构及其与沉积时基片温度间的关系.结果表明:薄膜由晶态的GaAs及非晶SiO2组成,GaAs在沉积过程中未明显氧化,且以纳米颗位形式均匀地弥散在SiO2中;GaAs的平均粒径依赖于沉积时的基片温度获得了GaAs的平均位径为3～10nm的GaAs-SiO2镶嵌复合薄膜
Semiconductor GaAs microcrystallites were successfully embedded in SiO2 thin films by RF magnetron co-sputtering technique. Structures of the thin films were characterized by transmisson electron microscopy X-ray diffraction and X-ray photoelectron micros
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