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简述了利用注氧隔离法(SIMOX)制备的SOI材料中产生的一些不同于体硅材料的特殊缺陷,涉及表面缺陷、Si/SiO2界面缺陷和埋氧层缺陷,包括这些缺陷的产生机制、表征方法以及一些降低和消除措施.

参考文献

[1] Andreas Plossl;Gertrud Krauter .Silicon-on-insulator: materials aspects and applications[J].Solid-State Electronics,2000(5):775-782.
[2] Colinge J P.Silicon On Insulator Technology:materials to VLSI[M].Kluwer Academic Publisher,1997:18.
[3] 黄如;张国艳.SOI CMOS技术及其应用[M].北京:中国科学技术出版社,2005:18.
[4] 阙端麟;陈修治.硅材料科学与技术[M].杭州:浙江大学出版社,2000:322.
[5] Celler GK.;Cristoloveanu S. .Frontiers of silicon-on-insulator [Review][J].Journal of Applied Physics,2003(9):4955-4978.
[6] Harold J Hovel.Silicon-on-insulator substrate:status and prognosis[A].,1996
[7] Hovel H;Almonte M;Tsai P et al.[J].Solid-State Electr,2004,48:1065.
[8] [OL].http://publie.itrs.net/
[9] Zhang Pengpeng;Tevaarwerk Emma;Park Byoungnam et al.[J].Nature,2006,439(09):703.
[10] Lin K C;Holland O W;Feldman L C et al.[J].Applied Physics Letters,1998,72(18):2313.
[11] Sutter P;Ernst W;Sutter E .[J].Applied Physics Letters,2004,85(15):3148.
[12] Skorupa W;Kreissig U;Hensel E et al.[J].Electronics Letters,1984,20:426.
[13] Kamins T I;Chiang S Y .[J].MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS,1986,53:239.
[14] Skorupa W;Hatzopoulos N;Yankov R A .[J].Applied Physics Letters,1995,67(20):2992.
[15] Nakajima Y;Sasaki K;Hanajiri T;Toyabe T;Morikawa T;Sugano T .Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation[J].Physica, E. Low-dimensional systems & nanostructures,2004(1/2):92-95.
[16] Groeseneken G;Maes H E;Beltran N et al.[J].IEEE Transactions on Electron Devices,1984,31:42.
[17] Li Yujun;Ma T P .[J].IEEE Transactions on Electron Devices,1998,45(06):1329.
[18] Seghir K.;Cristoloveanu S. .Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes[J].IEEE Transactions on Electron Devices,1993(6):1104-1111.
[19] Conley J F;Lenahan P M .[J].Applied Physics Letters,1993,62(01):40.
[20] Conley J F;Lenahan P M;Roitman P .[J].Applied Physics Letters,1992,60(23):2889.
[21] Afanas'ev V V;Ericsson P;Bengtsson S et al.[J].Applied Physics Letters,1995,66(13):1653.
[22] Nakashima S.;Miyamura Y.;Matsuzaki A.;Kataoka M.;Ebi D. Imai M.;Izumi K.;Ohwada N.;Katayama T. .INVESTIGATIONS ON HIGH-TEMPERATURE THERMAL OXIDATION PROCESS AT TOP AND BOTTOM INTERFACES OF TOP SILICON OF SIMOX WAFERS[J].Journal of the Electrochemical Society,1996(1):244-251.
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