{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"半导体量子/聚合物纳米复合材料是在分子尺度上形成的先进光电功能材料,其综合了半导体和聚合物材料的各自优点,并呈现出独特的电学、光学和光电子学等特性.根据聚合物中掺杂纳米半导体量子材料的种类不同,对半导体量子/聚合物纳米复合材料的制备、分类、器件结构与特性和研究进展进行了概要评述,并展望了其发展趋势.","authors":[{"authorName":"方鲲","id":"ccbafdbe-7d82-4230-b837-a2c8e4374904","originalAuthorName":"方鲲"},{"authorName":"路阳","id":"a737f301-6cbc-4f19-bcb3-fdf6eed0bbb7","originalAuthorName":"路阳"},{"authorName":"王凤平","id":"6a25ec7c-c250-44f6-bb2d-c8426caa3a26","originalAuthorName":"王凤平"},{"authorName":"邱宏","id":"c87119d3-9a4f-4bc0-b311-a33346a18178","originalAuthorName":"邱宏"}],"doi":"","fpage":"102","id":"7e8cce4f-6fcf-4018-bcdf-019f84c97c8a","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"5efd40f9-f77c-44ad-9605-c5a9b865525f","keyword":"半导体量子","originalKeyword":"半导体量子点"},{"id":"3632af1a-2f85-471e-8592-4853568c9dad","keyword":"聚合物","originalKeyword":"聚合物"},{"id":"f5d367f1-7356-47fa-94a8-2deb73425371","keyword":"纳米复合材料","originalKeyword":"纳米复合材料"},{"id":"1a2f8cf1-3ab6-499b-985c-07e4d9f0dafc","keyword":"光电特性","originalKeyword":"光电特性"}],"language":"zh","publisherId":"cldb2006z1032","title":"半导体量子/聚合物纳米复合材料研究进展","volume":"20","year":"2006"},{"abstractinfo":"半导体量子是固体发光材料中的一个新兴领域,对它的研究涉及多学科的交叉.该纳米材料具有独特的结构和物理、化学性能,被广泛应用于生物探针、激光器、光电子器件等领域.主要介绍并分析比较了Ⅱ~Ⅵ族半导体量子的合成方法、研究进展及各种方法间的优缺点.","authors":[{"authorName":"王璐","id":"a2174019-bbda-4c01-9727-4feff06c30b6","originalAuthorName":"王璐"},{"authorName":"王德平","id":"999ad5fd-a8c9-4953-8f1c-21ed824b5fa4","originalAuthorName":"王德平"},{"authorName":"黄文旵","id":"8affafa0-bcb6-46fd-8558-c8797023246c","originalAuthorName":"黄文旵"}],"doi":"","fpage":"12","id":"f15431a8-8382-4514-9fa7-8d02e841ad76","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"9ecd0690-d171-41e0-bd94-d22870779fcb","keyword":"半导体量子","originalKeyword":"半导体量子点"},{"id":"1dd307e2-deed-4b1b-a744-45dc739e4be0","keyword":"合成方法","originalKeyword":"合成方法"},{"id":"9ddbbbe3-e5f3-4b12-9c3b-784b7e6b52cf","keyword":"Ⅱ~Ⅵ族化合物","originalKeyword":"Ⅱ~Ⅵ族化合物"},{"id":"d42e9e05-ef77-464e-9fc7-c667781a7bed","keyword":"荧光","originalKeyword":"荧光"}],"language":"zh","publisherId":"cldb2005z1005","title":"Ⅱ~Ⅵ族半导体量子合成方法的研究进展","volume":"19","year":"2005"},{"abstractinfo":"半导体量子由于具有独特的发光特性而具有极高的应用价值.结合本实验室的工作介绍了半导体量子的发光原理和发光特性,在实验中发现核壳结构的CdSe/CdS半导体量子比没有包覆的CdSe半导体量子的发光稳定性提高,吸收光谱和发射光谱均发生红移,而且粒径不同,半导体量子所呈现的颜色也不同,随着粒径的增加吸收光谱和发射光谱向长波方向红移.介绍了半导体量子点在光电子器件和生物医学方面的应用,并对其发展前景进行了展望.","authors":[{"authorName":"唐爱伟","id":"385a055c-4e26-401b-889d-f86a3c2ea64e","originalAuthorName":"唐爱伟"},{"authorName":"滕枫","id":"89798311-6ed9-4330-acc2-c12a7b5f24fd","originalAuthorName":"滕枫"},{"authorName":"王元敏","id":"f333828a-57da-4c98-be66-09066dc9c07f","originalAuthorName":"王元敏"},{"authorName":"周庆成","id":"a48073b2-a4ab-4c04-952b-68dbbcba3816","originalAuthorName":"周庆成"},{"authorName":"王永生","id":"5e53e669-625c-451d-bce4-b6d831080464","originalAuthorName":"王永生"}],"doi":"10.3969/j.issn.1007-2780.2005.04.008","fpage":"302","id":"e2ffb353-bad1-4e25-8d5c-6edd70a9a39a","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"cc6ddca8-24e3-4896-9b9c-e09a95dd2b53","keyword":"半导体量子","originalKeyword":"半导体量子点"},{"id":"ec4949fc-8d40-4c47-a187-8af8c276bc4f","keyword":"发光特性","originalKeyword":"发光特性"},{"id":"99f52c7e-9ef1-4183-a693-c66a365cd326","keyword":"生物荧光标记","originalKeyword":"生物荧光标记"},{"id":"2a67682d-8896-45a8-bc66-c742394950fd","keyword":"电致发光器件","originalKeyword":"电致发光器件"}],"language":"zh","publisherId":"yjyxs200504008","title":"II-VI族半导体量子的发光特性及其应用研究进展","volume":"20","year":"2005"},{"abstractinfo":"采用密度矩阵的方法进行数值模拟计算紧束缚态的半导体量子的增益与吸收行为.其动力学数值结果显示,在某些不同时刻的增益谷和吸收峰的左右分布保持不变对称性,且有上下镜像反转的现象发生;在在长时间演化中发现该量子系统的增益与吸收发生激烈的振荡而呈现出了量子光学中典型的崩塌与复苏的有趣物理现象.","authors":[{"authorName":"赵顺才","id":"24ce8308-d052-4a70-9490-5ff72bd708cb","originalAuthorName":"赵顺才"},{"authorName":"刘正东","id":"72789992-52a8-48d3-9fdb-e4777c57cf13","originalAuthorName":"刘正东"},{"authorName":"廖庆洪","id":"ce83bd3d-836f-4c23-8041-3c80bedb4bf3","originalAuthorName":"廖庆洪"}],"doi":"10.3969/j.issn.1007-5461.2008.03.005","fpage":"276","id":"81b86596-d7e9-4cf3-a5e8-e1841692c04f","issue":"3","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"9e0aa4b5-b500-4dd8-a644-0a74fe7deb77","keyword":"量子光学","originalKeyword":"量子光学"},{"id":"644a9f10-a3ec-4820-bdce-98499fe9cc6b","keyword":"半导体量子","originalKeyword":"半导体量子点"},{"id":"962f6d98-e076-4f93-9359-39987efaae98","keyword":"增益与吸收","originalKeyword":"增益与吸收"},{"id":"fccba18b-5093-4feb-9c75-c6e7ca96b7ad","keyword":"崩塌与复苏现象","originalKeyword":"崩塌与复苏现象"}],"language":"zh","publisherId":"lzdzxb200803005","title":"半导体量子增益与吸收特性的研究","volume":"25","year":"2008"},{"abstractinfo":"介绍了半导体量子材料禁阻类型,详细阐述了共熔法、溶胶-凝胶法、离子注入法等半导体量子玻璃材料的制备方法,探讨了半导体量子玻璃的尺寸效应、禁阻效应、库仑阻塞效应和非线性光学效应等特性及其未来应用前景.","authors":[{"authorName":"黄光锋","id":"6d8c8224-f465-4e2a-8d90-08a0447ae654","originalAuthorName":"黄光锋"},{"authorName":"卢安贤","id":"c05ed280-ec10-44ea-80f5-3f7852779599","originalAuthorName":"卢安贤"}],"doi":"","fpage":"30","id":"7d85afe6-03a5-481f-8b5b-0e624f8eadb2","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"d4191c72-7b94-483c-ba12-74df2a05e4e6","keyword":"半导体量子玻璃","originalKeyword":"半导体量子点玻璃"},{"id":"4c22aa99-ee66-4512-a2bc-f13623f8a87b","keyword":"量子限制","originalKeyword":"量子限制"},{"id":"015bfc7a-5243-4fd2-995f-3f6c1ed19214","keyword":"非线性光学效应","originalKeyword":"非线性光学效应"}],"language":"zh","publisherId":"cldb200605009","title":"半导体量子玻璃的研究进展","volume":"20","year":"2006"},{"abstractinfo":"生长高面密度和尺寸均匀的量子半导体量子实用化的关键.本文在已有研究工作的基础上,从材料本身的特性和生长量子时的外界条件两方面总结了影响量子生长的各种因素,从原理上分析了控制量子有序生长的可能性的几种方法.","authors":[{"authorName":"杨红波","id":"c84b3381-2503-4a0a-9c1b-f4ee763357c7","originalAuthorName":"杨红波"},{"authorName":"俞重远","id":"5a937563-f00d-4144-b972-2b7c19f23e08","originalAuthorName":"俞重远"},{"authorName":"刘玉敏","id":"5f56f9c5-6c21-4565-9bf5-5b8036d40bf7","originalAuthorName":"刘玉敏"},{"authorName":"黄永箴","id":"644e8fd3-b6ff-4a15-aef3-24d6d5978159","originalAuthorName":"黄永箴"}],"doi":"10.3969/j.issn.1000-985X.2004.06.031","fpage":"1018","id":"63ff208d-976b-4f78-9fac-e83de27ceb1e","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"d2c1c269-20a2-4a91-8f99-a1cee4d72325","keyword":"量子","originalKeyword":"量子点"},{"id":"8e87983c-57da-48a0-845e-0e23c1d90520","keyword":"自组织生长","originalKeyword":"自组织生长"},{"id":"1dd57b1b-a40c-405a-a9bf-977661051925","keyword":"应力场","originalKeyword":"应力场"},{"id":"502d9b66-31a0-4ae2-9fa0-e0b2afe90b74","keyword":"外界条件","originalKeyword":"外界条件"}],"language":"zh","publisherId":"rgjtxb98200406031","title":"影响半导体量子生长因素的分析","volume":"33","year":"2004"},{"abstractinfo":"介绍了制备半导体量子的3种方法,包括光刻、自组织生长和胶体化学方法.简要比较了3种方法,详细讨论了用胶体化学法合成半导体量子.胶体量子具有一些优异的性能,有着广泛的应用,列举了胶体量子的一些独特应用.","authors":[{"authorName":"张建兵","id":"28a62140-9744-4099-802f-12cc9456ac7c","originalAuthorName":"张建兵"},{"authorName":"张道礼","id":"9010b812-1a32-42c1-8a61-5d93cfb48087","originalAuthorName":"张道礼"}],"doi":"","fpage":"21","id":"7d525041-b61e-4aef-8cfe-65d1f69ae319","issue":"z2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"d342a31f-8d7d-475d-9c81-6288c3d051bb","keyword":"量子","originalKeyword":"量子点"},{"id":"8f48d7ee-cd75-424b-beae-76adcc44e284","keyword":"胶体","originalKeyword":"胶体"},{"id":"2d35a127-9e5c-47c7-ad3d-af862ea8f1c8","keyword":"纳米晶","originalKeyword":"纳米晶"}],"language":"zh","publisherId":"cldb2004z2007","title":"胶体化学法合成半导体量子的研究进展","volume":"18","year":"2004"},{"abstractinfo":"单元素半导体量子的制备成功使光电集成成为可能.介绍了单元素半导体量子的制备方法,包括射频磁控溅射技术、硅离子注入技术、化学气相沉积法、溶胶-凝胶法等;并且介绍了单元素半导体量子的发光机理模型,包括量子限制效应模型、与氧有关的缺陷发光、量子限制效应-发光中心复合发光和界面层中的激子效应发光等;另外对单元素半导体量子的发展前景进行了展望.","authors":[{"authorName":"刘俊朋","id":"7c776b9d-0aeb-4501-8d98-70f97e9ad420","originalAuthorName":"刘俊朋"},{"authorName":"杜希文","id":"b27cf30e-af32-4a1b-9344-294b2201af6f","originalAuthorName":"杜希文"},{"authorName":"孙景","id":"441acc88-b3e5-4a94-a850-aad8bb8805a7","originalAuthorName":"孙景"},{"authorName":"鲁颖炜","id":"80d0f8a5-75de-4b9f-80a9-a82ba73e95be","originalAuthorName":"鲁颖炜"}],"doi":"","fpage":"225","id":"71399f22-5769-43e3-aef4-39a052c5465e","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"731e1bd5-7597-4193-956e-00ced250ae01","keyword":"单元素半导体","originalKeyword":"单元素半导体"},{"id":"6a836641-fd01-4d14-8def-52242e26bbe7","keyword":"量子","originalKeyword":"量子点"},{"id":"fb9abd93-8ef5-43f4-ba76-4f71e27a4578","keyword":"制备方法","originalKeyword":"制备方法"},{"id":"ec4fb5b3-67ec-4fa7-9565-a89ffc3b3bc3","keyword":"光致发光","originalKeyword":"光致发光"}],"language":"zh","publisherId":"cldb2004z1077","title":"单元素半导体量子制备及其光致发光性能的研究进展","volume":"18","year":"2004"},{"abstractinfo":"自组装半导体量子是人工设计、生长的一种具有量子尺寸效应、量子干涉效应、表面效应、量子隧穿和库仑阻塞效应以及非线性光学效应的新型功能材料。由于其具有晶体缺陷少、材料制备工艺相对简单等优点,而在未来纳米电子器件的研制中有重要的应用价值。本文按照纵向输运、横向输运、电荷存储的顺序,扼要评述了自组装半导体量子电子学性质的最新研究进展,并对目前存在的问题和发展前景作了分析。","authors":[{"authorName":"孙捷","id":"783d795c-4632-44b5-a637-c25083730f1f","originalAuthorName":"孙捷"},{"authorName":"金鹏","id":"3498348d-66cb-434f-8579-dc9d273cb522","originalAuthorName":"金鹏"},{"authorName":"王占国","id":"9f20b569-27c6-45b4-be0f-8218ca24bb3a","originalAuthorName":"王占国"}],"categoryName":"|","doi":"","fpage":"463","id":"dfc06810-2a43-4661-aee2-3307794c94a3","issue":"5","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"0d848dd3-f3c6-40cf-bb0f-8fb008310ead","keyword":"自组装半导体量子","originalKeyword":"自组装半导体量子点"},{"id":"93802107-c975-4f3d-8ee3-6d260f1c72af","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_2005_5_10","title":"自组装半导体量子的电子学性质研究进展","volume":"41","year":"2005"},{"abstractinfo":"自组装半导体量子是人工设计、生长的一种具有量子尺寸效应、量子干涉效应、表面效应、量子隧穿和Coulumb阻塞效应以及非线性光学效应的新型功能材料.由于其具有晶体缺陷少、材料制备工艺相对简单等优点而在未来纳米电子器件的研制中有重要的应用价值.本文按照纵向输运、横向输运、电荷存储的顺序,扼要评述了自组装半导体量子电子学性质的最新研究进展,并对目前存在的问题和发展前景作了分析.","authors":[{"authorName":"孙捷","id":"a86abeed-3021-4353-8365-f39deab10a60","originalAuthorName":"孙捷"},{"authorName":"金鹏","id":"c71a3325-17a1-4ffb-93e7-854badb7a136","originalAuthorName":"金鹏"},{"authorName":"王占国","id":"8c506102-9c6c-46b4-8ae0-d45c50825b40","originalAuthorName":"王占国"}],"doi":"10.3321/j.issn:0412-1961.2005.05.003","fpage":"463","id":"6f089865-9fe0-4543-8c8a-8256540ff14e","issue":"5","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"25dd1147-15f7-4f17-88fd-0fb15926bd7c","keyword":"自组装半导体量子","originalKeyword":"自组装半导体量子点"},{"id":"4200d9ff-9dce-4d29-b404-fe0d2f9e50a5","keyword":"量子尺寸效应","originalKeyword":"量子尺寸效应"},{"id":"6bca7a1e-1ac5-49a9-9a09-dcf82d079caf","keyword":"纳米电子器件","originalKeyword":"纳米电子器件"}],"language":"zh","publisherId":"jsxb200505003","title":"自组装半导体量子的电子学性质研究进展","volume":"41","year":"2005"}],"totalpage":1113,"totalrecord":11130}