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对(Bi1/2Na1/2)TiO3-BaTIO3压电陶瓷在准同型相界处的组成掺入不同量的La3+,研究掺杂对于体系结构、压电与介电性能的影响.结果表明,掺杂使得体系的弛豫铁电体特征更为明显,相变的弥散程度增大,室温下的介电常数增大;当掺杂量低于1.5%时,材料的d33值增大,但同时介电损耗也相对于基体有所增加.当掺杂量达到 3%以后,陶瓷的压电性能严重降低.

(1-x)(Na1/2Bi1/2)TiO3-xBaTiO3 (x=0.06) with 1-5 at% lanthanum was prepared by the conventional mixed oxide method. The
effect of La3+ doping on dielectric behavior and piezoelectric properties of the ceramics was studied. The relaxor behavior of the La3+
doped ceramics is more evident. At room temperature, the dielectric constant is increased. When the La content is less than 1.5 at%, the piezoelectric
properties are enhanced. But in the meantime the dielectric loss of the ceramics is also increased. When the content of La3+ is up to 3 at%,
the ceramics’ piezoelectric properties are remarkably debased.

参考文献

[1] Smolenskii G A, Isupov V A, Agranovskaya A I, et al. Sov. Phys. Solid State (Engl. Transl.), 1961, 2 (11): 2651--2654.
[2] Sakata K, Takenaka T, Naitou Y. Ferroelectrics, 1992, 131: 219--226.
[3] Sakata K, Masuda Y. Ferroelectrics, 1974, 5: 347--349.
[4] Takenaka T, Sakata K. Ferroelectrics, 1989, 95: 153--156.
[5] Aree Herabut, Ahmad Safari. J. Am. Ceram. Soc., 1997, 80 (11): 2954--2958.
[6] Takenaka T, Sakata K, Toda K. Jpn. J. Appl. Phys., 1989, 28: 59--62.
[7] Takenaka T, Maruyama K, Sakata K. Jpn. J. Appl. Phys. 1991, 30 (9B): 2236--2239.
[8] Vakhrushev S B, Isupov V A, Kvyatkovsky B E , et al. Ferroelectrics, 1985, 63: 153--160.
[9] Smolensky G A, Isupov V A. Dokl. Akad. Nank., USSR., 1954, 96: 53--54.
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