集成电路制造中,AlSiCu互连线一般使用干法刻蚀来制造,刻蚀后需经清洗工艺将残留物去除掉。而在清洗时,合金表面会出现空洞。我们在对空洞形成原理分析后发现,AlSiCu合金是由α相铝铜和富含Cu的θ相铝铜合金组成,在清洗过程中会发生电偶腐蚀而腐蚀Al。并且清洗使用的化学试剂由于含有胺根,水解后加剧了对Al的腐蚀。我们通过降低AlSiCu合金溅射时的衬底温度,将AlSiCu合金表面氧化,去离子水清洗时通入CO2这三种方案来防止AlSiCu合金在清洗时被腐蚀,从而提高了产品的成品率。
AlSiCu connecting lines are normally fabricated by dry etching method in modern semiconductor industry.After etching,we need clean the AlSiCu lines.In the cleaning process,small holes are always produced on the surface of metal.We analyzed the principle of the formation of holes and found that AlSiCu alloy consists of α phase AlCu and Cu-rich θ phase AlCu,which can cause galvanic corrosion for Al in the cleaning process.Furthermore,the cleaning solvent contains amine,which increases the corrosion of aluminum.By decreasing the substrate temperature in the process of sputter,oxygenating the surface of AlSiCu and adding CO2 into DI water,eventually,the corrosion on the AlSiCu can be prevented and the yield of final products is improved.
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