本文介绍了X射线测量单晶应力的原理和方法,测量了Si单晶的应力,比较了双晶摇摆和三轴晶ω～2θ扫描对结果的影响,考察了计算过程中数据组个数,无应力布拉格角θ_0对应力测量的影响.结果表明,采用三轴晶ω～2θ扫描比双晶摇摆更准确,多重线性回归方法对θ_0依赖性很小,但测量数据组个数不应低于6.
The principle and method of single crystal stress measurement via X-ray were presented. Si single crystal's stress was measured, the difference between double axis rocking model and triple axis ω-2θ scan model was compared, the effect of the number of measured arrays and θ_0 on the stress measurement was discussed. The results showed that it was more credible measured by triple axis ω-2θ scan model than by double axis rocking model, the multiple regression analysis method could be used to calculate the stress of single crystal without stress-free θ_0, the number of measured arrays should be more than 6.
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