在常压下使用烧结法制备了具有高有序结构的Bi4Si3O12微晶.利用X射线衍射分析了生成样品的物相,通过环境扫描电镜观察了Bi4Si3O12晶体微观形貌.用单样本Kolmogorov-Smirnov法分别对晶粒夹角进行了统计学检验.结果显示:在一个稳定的硅酸铋晶列中晶粒成对分布.在一个晶行的一侧,晶粒取向和该晶行发育方向之间的夹角服从正态分布.晶行一侧的晶粒取向夹角的大小范围为53.9°~68.9°.一个稳定晶行一侧的平均晶粒夹角和晶粒尺寸之间具有高度的正相关性.如果稳定晶行一侧的平均晶粒夹角超过稳定晶列中晶粒夹角范围的最大值(68.9°),对应侧的高有序的晶列结构将会被破坏.然而,一侧有序结构的局部湮灭过程不会对晶行另一侧的高有序结构产生任何影响.
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