衬底温度对共蒸发制备GaSb多晶薄膜性质的影响

人工晶体学报, 2011, 40(5): 1115-1119.

衬底温度对共蒸发制备GaSb多晶薄膜性质的影响

隋妍萍 ^1, , 阮建明 ^2, , 李涛 ^3, , 蔡宏琨 ^4, , 何炜瑜 ^5, , 张德贤 ^6,

1.南开大学信息技术科学学院电子科学与微电子系,天津 300071

2.南开大学信息技术科学学院电子科学与微电子系,天津 300071

3.南开大学信息技术科学学院电子科学与微电子系,天津 300071

4.南开大学信息技术科学学院电子科学与微电子系,天津 300071

5.南开大学信息技术科学学院电子科学与微电子系,天津 300071

6.南开大学信息技术科学学院电子科学与微电子系,天津 300071

基金项目: 中央高校基本科研业务费专项资金资助

关键词： GaSb多晶薄膜 , 共蒸发 , 衬底温度

Effect of Substrate Temperatures on the Properties of GaSb Polycrystalline Films by Co-evaporation

采用共蒸发的方法在玻璃衬底上制备出GaSb多晶薄膜材料.研究了薄膜生长速率与衬底温度、Ga源温度和Sb源温度的关系.通过XRD、UV-Vis、Hall效应和AFM等测试方法,研究了衬底温度对于GaSb薄膜的结构特性、光电性质以及表面形貌的影响.GaSb多晶薄膜具有(111)择优取向,薄膜的吸收系数达到105 cm-1,晶粒尺寸随衬底温度升高逐渐增大；衬底温度为540℃时,薄膜的迁移率达到127 cm2/V·s,空穴浓度为3×1017 cm-3.GaSb薄膜的表面粗糙度随温度增加而增加.

参考文献

[1]	Gruenbaum P E;Dinh V T;Sundaram V S .Gallium Antimonide Infrared Solar Cells with Improved Efficiency and Manufacturability[J].Solar Energy Materials & Solar Cells,1994,32:61.
[2]	Sundaram V S;Gruenbaum P E .Zinc Diffusion in GaSb[J].Journal of Applied Physics,1993,73:3787.
[3]	Bett AW.;Sulima OV.;Keser S. .STUDY OF ZN DIFFUSION INTO GASB FROM THE VAPOUR AND LIQUID PHASE[J].Journal of Crystal Growth,1997(1/2):9-16.
[4]	Kozhemyakin G N;Zolkina L V;Rom M A .Influence of Ultra-sound on the Growth Striations and Electrophysical Properties of Gax Int-x Sb Single Crystals[J].Solid-State Electronics,2007,51:820.
[5]	Dutta PS .III-V Ternary bulk substrate growth technology: a review[J].Journal of Crystal Growth,2005(1/2):106-112.
[6]	Mauk MG.;Cox JA.;Sulima OV.;Bett AW.;Mueller RL. Sims PE.;McNeely JB.;DiNetta LC.;Shellenbarger ZA. .Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices[J].Journal of Crystal Growth,2000(1/4):189-193.
[7]	Dong Y;Scott D W;Wei Y et al.Low-resistance p-type Poly-crystalline GaSb Grown by Molecular Beam Epitaxy[J].Journal of Crystal Growth,2003,256:223.
[8]	李林,王勇,刘国军,李梅,王晓华.GaSb薄膜生长的RHEED研究[J].人工晶体学报,2006(01):139-142.
[9]	Yi S S;Moran P D;Zhang X et al.Oriented Crystallization of GaSb on a Pattered,Amorphous Si Substrate[J].Applied Physics Letters,2001,78(10):1358.
[10]	Akahane K;Yamamoto N;Gozu S I et al.Heteroepitaxial Growth of GaSb on Si (001) Substrates[J].Journal of Crystal Growth,2004,264:21.
[11]	Qiao Z X;Sun Y;He W Y et al.Polycry stalline GaSb Thin Films Grown by Go-evaporation[J].Chinese Journal of Semiconductors,2009,30(03):033004.
[12]	Kim S;Lee W;Jung M et al.ImpactofZnTe buffer on the Electrical Propertiesofn-typeGaSb:TeFims[J].AppliedSurfaceScience,2009,256:1261.
[13]	Contreras M;Weisner H;Webb J.Thin-film Polycrystalline Ga1-xInx Sb Materials Thermophotovoltaic Generation of Electricity:Third NREL Conference[A].Woodbury,NY,1997:403-410.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

衬底温度对共蒸发制备GaSb多晶薄膜性质的影响

Effect of Substrate Temperatures on the Properties of GaSb Polycrystalline Films by Co-evaporation

参考文献