SiC单晶因其宽的禁带宽度、高的电子饱和速度、大的临界击穿场强、高的热导率和热稳定性等特性而成为制作高频、大功率和耐高温器件的理想材料.综述了SiC材料及器件的研究现状、关键技术和发展趋势;分析了我国的研究现状和存在的差距.
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