采用射频磁控溅射技术在室温下玻璃衬底上制备了铟镓锌氧(In-Ga-Zn-O)透明导电薄膜,并对该薄膜进行了真空退火.研究了不同退火温度对In-Ga-Zn-O薄膜结构、电学和光学性能的影响.X射线衍射(XRD)表明,在300℃至500℃退火温度范围内,In-Ga-Zn-O薄膜为非晶结构.随着退火温度的增加,薄膜的电阻率先减小后增大.透射光谱显示退火后In-Ga-Zn-O薄膜在500～ 800 nm可见光区平均透过率超过80％,且在350 nm附近表现出较强的紫外吸收特性.经过退火的薄膜光学禁带宽度随着退火温度的增加先增大后减小,350 ℃最大达到3.91 eV.
参考文献
| [1] | Jun Hyung Lim;Jong Hyun Shim;Jun Hyuk Choi;Jinho Joo;Kyung Park;Haseok Jeon;Mi Ran Moon;Donggeun Jung;Hyoungsub Kim;Hoo-Jeong Lee .Solution-processed InGaZnO-based thin film transistors for printed electronics applications[J].Applied physics letters,2009(1):012108-1-012108-3. |
| [2] | Moon-Seok Kim;Young Hwan Hwang;Sungho Kim;Zheng Guo;Dong-II Moon;Ji-Min Choi;Myeong-Lok Seol;Byeong-Soo Bae;Yang-Kyu Choi .Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory[J].Applied physics letters,2012(24):243503-1-243503-4. |
| [3] | Nomura K;Kamiya T;Ohta H;Uruga T;Hirano M;Hosono H .Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations[J].Physical review, B. Condensed matter and materials physics,2007(3):5212-1-5212-5-0. |
| [4] | 余旭浒,马瑾,计峰,王玉恒,张锡健,程传福,马洪磊.薄膜厚度对ZnO：Ga透明导电膜性能的影响[J].功能材料,2005(02):241-243. |
| [5] | Martins R;Barquinha P;Ferreira I;Pereira L;Goncalves G;Fortunato E .Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors[J].Journal of Applied Physics,2007(4):44505-1-44505-7-0. |
| [6] | 马瑾,余旭浒,计峰,王玉恒,张锡健,程传福,马洪磊.真空退火对溅射淀积ZnO：Ga透明导电膜性能的影响[J].稀有金属材料与工程,2005(07):1166-1168. |
| [7] | Dong BZ;Fang GJ;Wang JF;Guan WJ;Zhao XZ .Effect of thickness on structural, electrical, and optical properties of ZnO : Al films deposited by pulsed laser deposition[J].Journal of Applied Physics,2007(3):33713-1-33713-7-0. |
| [8] | Alam MJ.;Cameron DC. .Investigation of annealing effects on sol-gel deposited indium tin oxide thin films in different atmospheres[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):76-82. |
| [9] | 袁玉珍,王辉,张化福,刘汉法,刘云燕.膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响[J].人工晶体学报,2010(01):169-173. |
| [10] | 张化福,类成新,刘汉法,袁长坤.利用直流磁控溅射法在柔性衬底上制备ZnO： Zr新型透明导电薄膜[J].人工晶体学报,2009(03):732-737. |
| [11] | Srikant V.;Clarke DR. .OPTICAL ABSORPTION EDGE OF ZNO THIN FILMS - THE EFFECT OF SUBSTRATE[J].Journal of Applied Physics,1997(9):6357-6364. |
| [12] | Fouchet A;Prellier W;Mercey B;Mechin L;Kulkarni VN;Venkatesan T .Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study[J].Journal of Applied Physics,2004(6):3228-3233. |
| [13] | Fouchet A;Prellier W;Mercey B .Influence of the microstructure on the magnetism of Co-doped ZnO thin films[J].Journal of Applied Physics,2006(1):13901-1-13901-6-0. |
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