利用激光脉冲法在LaAlO3衬底上沉积制备LaNiO3薄膜作为底电极并外延生长(100) Pb(Zr0.52Ti0.48)O3铁电薄膜,系统研究了生长温度对PZT外延结构和电学特性的影响.研究发现当生长温度高于550℃时即可得到外延(100)PZT薄膜.在对所制备的PZT薄膜的结构和性能测试表明,650℃下生长的PZT薄膜外延性最佳,并且表现出优异的介电和铁电性能,介电常数ε、剩余极化Pr和矫顽场Ec分别为900、26.5 μC/cm2和52.1kV/cm.试验还证实这种外延PZT薄膜具有优良的抗疲劳特性,可用于铁电存储器的制备中去.
参考文献
[1] | Cohen RE. .Theory of ferroelectrics: a vision for the next decade and beyond[J].The journal of physics and chemistry of solids,2000(2):139-146. |
[2] | Kohlstedt H;Mustafa Y;Gerber A et al.[J].Microelectronic Engineering,2005,80:296-304. |
[3] | 邵天奇,任天令,李春晓,朱钧.高介电常数材料在半导体存储器件中的应用[J].固体电子学研究与进展,2002(03):312-317. |
[4] | Ramesh R;Chan W K;Wilkens B et al.[J].Applied Physics Letters,1992,61(13):1537-1539. |
[5] | Ramesh R;Gilchrist H;Sands T et al.[J].Applied Physics Letters,1993,63(26):3592-3594. |
[6] | Lung S L;Lin Dennis;Chen S S.Modularized Low Temperature LNO/PZT/LNO Ferroelectric Capacitor-Over-Interconnect (COI) FeRAM for Advanced SOC (ASOC) Application[A].,2002:479-482. |
[7] | Scott J F;Araujo C A;Meinick V M et al.[J].Japanese Journal of Applied Physics,1991,70(01):382-387. |
[8] | Torrance J B;Lacorre P;Nazzal A I et al.[J].Physical Review B:Condensed Matter,1992,45(14):8209-8212. |
[9] | Guerrero C.;Ferrater C.;Roldan J.;Garcia-Cuenca MV.;Varela M.;Sanchez F. .Pulsed laser deposition of epitaxial PbZrxTi1-xO3 ferroelectric capacitors with LaNiO3 and SrRuO3 electrodes[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/4):219-222. |
[10] | Yang C C;Chen M S;Hong T J et al.[J].Applied Physics Letters,1995,66(20):2643-2645. |
[11] | Meng XJ.;Sun JL.;Ye HJ.;Guo SL.;Chu JH.;Cheng JG. .Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films[J].Journal of Crystal Growth,2000(1/2):100-104. |
[12] | Cho C R .[J].Materials science and engineering B-solid state materials for advanced technology,1999,64(02):113-117. |
[13] | Yoo I K;Desu S B;Xing J .[J].Materials Research Society Symposium Proceedings,1993,310:165-117. |
[14] | Yamauchi S;Tamura H;Yoshimaru M et al.[J].Japanese Journal of Applied Physics,1993,32(9B):4188-4121. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%