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利用对靶磁控溅射方法在尺寸为6 cm×6 cm有机玻璃衬底上室温沉积ITO透明导电氧化物薄膜,重点研究了沉积时间对于ITO薄膜导电性、可见光透光性以及红外发射特性的影响.结果发现随溅射时间延长,薄膜厚度呈线性增加;XRD分析显示薄膜逐渐由非晶结构转变为(400)与(440)取向的多晶结构;薄膜导电性能提高,电阻率整体迅速下降,在溅射时间为60 min时达到最小为2.1×10-4Ω·cm,载流子浓度达到最高值为1.2×1021 cm-3,同时薄膜红外发射率最低可达0.17;薄膜可见光透光率逐渐下降,并且在紫外光区域出现一定红移.

参考文献

[1] 崔敏,邓金祥,张维佳,段苹.直流反应磁控溅射法制备太阳电池用ITO透明导电膜[J].真空科学与技术学报,2012(08):763-766.
[2] Hyun Cho;Young-Hoon Yun .Characterization of indium tin oxide (ITO) thin films prepared by a sol-gel spin coating process[J].CERAMICS INTERNATIONAL,2011(2):615-619.
[3] 马卫红,蔡长龙.磁控溅射制备ITO薄膜光电性能的研究[J].真空,2011(06):18-20.
[4] ShumeiSong;Tianlin Yang;JingjingLiu;YanqingXin;Yanhui Li;ShenghaoHan .Rapid thermal annealing of ITO films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(16):7061-7064.
[5] Min Hyung Ahn;Eou Sik Cho;Sang Jik Kwon.Characteristics of ITO-resistive touch film deposited on a PET substrate by in-line DC magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2014:221-227.
[6] Song, D.-H.;Shin, K.-S.;Kim, Y.-J.;Choi, Y.-S.;Choi, I.-S.;Han, J.-G. .Low temperature synthesis of Al doped ZnO thin films by facing target sputtering[J].Surface & Coatings Technology,2013(Suppl.1):S101-S106.
[7] 杨盟,刁训刚,刘海鹰,武哲,舒远杰.氮化处理对ITO薄膜光电特性影响[J].功能材料,2006(09):1518-1521.
[8] Kamei M;Shigesato Y;Yasui I;Taga N;Takaki S;ASAHI GLASS CO LTD RES CTR YOKOHAMA KANAGAWA 221 JAPAN. .Comparative study of heteroepitaxial and polycrystalline tin-doped indium oxide films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1997(0):267-272.
[9] 李林娜,薛俊明,赵亚洲,李养贤,耿新华,赵颖.ITO薄膜的厚度对其光电性能的影响[J].人工晶体学报,2008(01):147-150.
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