采用镓自助熔剂的方法生长出了UFeGa5单晶,采用X射线衍射技术和Rietveld方法对UFeGa5晶体结构进行了研究.结果表明:生长出的UFeGa5单晶体结构完整,结晶性好.UFeGa5具有HoCoGa5型四方结构,空间群为P4/mmm(No.123),其晶格常数为a=0.42533(2) nm,c=0.67298(3) nm,并得到了透射电镜(TEM)实验验证.
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