采用高纯Zn、Mg、Se2单质为原料,以NH4Cl作为反应输运剂,用化学气相输运(CVT)的方法一步成功生长出ZnMgSe单晶.通过XRD、RO-XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了ZnMgSe晶体的结构、成份以及光学特性.结果表明:ZnMgSe单晶具有良好的结晶性能,在400～800 nm范围内透过率达到40％～50％,在2.2 ～2.6 eV范围内存在与深能级电子复合相关的发光带.研究证明由Zn、Mg、Se2单质在输运剂NH4Cl辅助下一步直接合成ZnMgSe单晶是可行的.
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