欢迎登录材料期刊网

材料期刊网

高级检索

本文报道了一种能在室温下对硫镓银晶体(112)面进行择优腐蚀的新腐蚀液配方,采用新腐蚀液对改进的Bridgman法生长的AgGaS2晶体进行腐蚀,用扫描电镜对蚀坑进行了观察,得到了清晰的(112)面蚀坑形貌,形状为三角锥形.初步解释了蚀坑的形成原因.AgGaS2晶体低指数的{100}面的腐蚀速度较慢,在腐蚀过程中逐渐显露出来,最终使晶体(112)面呈现出三角锥形蚀坑形貌.

参考文献

[1] Feigelson R S;Route R K .Recent Developments in the Growth of Chalcopyrite Crystals for Nonlinear Infrared Application[J].Optical Engineering,1987,26(02):113-119.
[2] Boyd G D;Kasper H;Mcpee J H .Linear and Nonlinear Optical Properties of AgGaS2,CuGaS2 and CuInS2,and Theory of the Wedge Technique for the Measurement of Nonlinear Coefficients[J].IEEE.J.Quantum Electronics,1971,7(12):563-573.
[3] Niwa E.;Masumoto K. .Growth of AgGaS2 single crystals by a self-seeding vertical gradient freezing method[J].Journal of Crystal Growth,1998(1/2):354-360.
[4] Gilman J J;Johnston W G;Sears G W .Dislocation Etch Pit Formation in Lithium Fluoride[J].Journal of Applied Physics,1958,29(05):747-754.
[5] Nakagawa K;Maeda K;Takeuchi S .Observation of Dislocations in Cadmium Telluride by Cathodoluminescence Microscopy[J].Applied Physics Letters,1979,34(09):574-575.
[6] Lu Y C;Route R K;Elwell D et al.Etch Pit Studies in CdTe Crystals[J].Journal of Vacuum Science and Technology A,1985,A3(01):264-270.
[7] Liu CM;Chen JC;Huang YC;Hsieh HL .The morphology of etch pits on a sapphire surface[J].The journal of physics and chemistry of solids,2008(2/3):572-575.
[8] Airoldi G;Beucherie P;Rinaldi C .Growth and Characterization of AgGaSe2 Crystals[J].Journal of Crystal Growth,1977,38:239-244.
[9] 赵北君,朱世富,李正辉,于丰亮,朱兴华,高德友.坩埚旋转下降法生长硫镓银单晶体及其特性观测[J].科学通报,2001(13):1132-1136.
[10] 徐宝琨;阎卫平;刘明登.结晶学[M].长春:吉林大学出版社,1991:316-323.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%