由于金刚石与Si有较大的晶格失配度和表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核率非常低.而负衬底偏压能够提高金刚石在镜面光滑的Si表面上的成核率,表明金刚石核与Si表面的结合力也得到增强.利用负偏压增强CVD系统制备金刚石膜时,气体辉光放电产生的离子对Si表面轰击,使得Si衬底表面产生了微缺陷(凹坑),增大了金刚石膜与Si衬底的结合面积.本工作主要从理论上研究离子轰击对金刚石膜与Si衬底结合力的影响.
参考文献
| [1] | 杨国伟.低压气相生长金刚石薄膜系统中衬底表面凹缺陷成核机制研究[J].高压物理学报,1994(03):229. |
| [2] | Yu Z M;Rogelet T et al.Diamond growth on turbostratic carbon by hot filament chemical vapor deposition[J].Journal of Applied Physics,1993,74(12):7235-7240. |
| [3] | Yugo S;Kanai T;Kimura T .Generation of diamond nuclei by electric filed in plasma chemical vapor deposition[J].Applied Physics Letters,1991,58(10):1036-1038. |
| [4] | 王万录,廖克俊,方亮,王必本,冯斌.负衬底偏压热灯丝CVD金刚石膜成核的研究[J].人工晶体学报,1999(01):65-68. |
| [5] | Wang W L;Sanchez G;Polo M C .Nucleation and initial growth of diamond by biased hot filament chemical vapor deposition[J].Journal of Applied Physics,1997,A65:241-249. |
| [6] | Stoner B R;Ma G H et al.Characterization of bias -enhanced nucleation of diamond on silicon by in vacuo surface analysis and transmission electron microscopy[J].Physical Review,1992,B45(19):11067-11084. |
| [7] | Jiang X;Schiffmann K;Klages C P .Nucleation and initial growth of diamond thin film on (100) silicon[J].Physical Review,1994,B50(12):8402-8410. |
| [8] | Wang BB.;Liao KJ.;Xiao JL.;Wang WL. .Experimental and theoretical studies of diamond nucleation on silicon by biased hot filament chemical vapor deposition - art. no. 085412[J].Physical Review.B.Condensed Matter,2001(8):085412-1-085412-12. |
| [9] | B. B. Wang;W. L. Wang;K. J. Liao .Micro-defects produced on a substrate by a glow discharge and the role of such defects on diamond nucleation[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):77-83. |
| [10] | Kátai S;Tass Z;Hárs Z et al.Measurement of ion energy distributions in the bias enhanced nucleation of chemical vapor deposited diamond[J].Journal of Applied Physics,1999,86:5549-5555. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%