基于晶体场理论,采用3d1离子在D2d对称中的晶场能级公式和EPR参量高阶微扰公式,计算了ThSiO4:V4+晶体的光谱和电子顺磁共振(EPR)参量g因子g//,g⊥和超精细结构常数A//,A⊥.计算结果与实验发现很好吻合.由于晶体中顺磁杂质中心的EPR参量与其缺陷结构密切相关,本计算还获得了V4+杂质中心缺陷结构的信息.对上述结果进行了讨论.
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