本文利用射频磁控溅射法在200℃的玻璃衬底上沉积了纳米晶PbSe薄膜,薄膜厚度分别为200 nm、250 nm、500 nm及600 nm.利用X射线衍射仪(XRD)、原子力显微镜(AFM)及紫外-可见分光光度计,分别研究了不同厚度PbSe薄膜的晶体结构、表面形貌和光学特性.结果表明:随膜厚增大,PbSe (200)晶面的择优取向显著增强,薄膜的结晶质量逐渐提高.此外,随薄膜厚度增加吸收边发生红移.膜厚为200nm、250 nm时,薄膜的禁带宽度为1.89 eV和1.60 eV;膜厚较大(500 nm及600 nm)时,带隙宽度减小至1.41 eV和1.34 eV,与太阳的光谱辐射更加匹配.因此,我们认为厚度较大的PbSe薄膜更适于用做太阳能电池的吸收层.
参考文献
| [1] | Luther JM;Beard MC;Song Q;Law M;Ellingson RJ;Nozik AJ .Multiple exciton generation in films of electronically coupled PbSe quantum dots[J].Nano letters,2007(6):1779-1784. |
| [2] | R. D. Schaller;V. I. Klimov .High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion[J].Physical review letters,2004(18):186601.1-186601.4. |
| [3] | T.S. Shyju;S. Anandhi;R. Sivakumar;S.K. Garg;R. Gopalakrishnan .Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films[J].Journal of Crystal Growth,2012(1):47-54. |
| [4] | Zhu JJ.;Wang H.;Xu S.;Chen HY. .Sonochemical method for the preparation of monodisperse spherical and rectangular lead selenide nanoparticles[J].Langmuir: The ACS Journal of Surfaces and Colloids,2002(8):3306-3310. |
| [5] | Roman T. Rumianowski;Roman S. Dygdala;Wojciech Jung;Waclaw Bala .Growth of PbSe thin films on Si substrates by pulsed laser deposition method[J].Journal of Crystal Growth,2003(1/3):230-235. |
| [6] | Hyeson Jung;Rade Kuljic;Michael A. Stroscio;Mitra Dutta .Confinement in PbSe wires grown by rf magnetron sputtering[J].Applied physics letters,2010(15):153106-1-153106-3. |
| [7] | El-Shazly, E.A.A.;Zedan, I.T.;Abd El-Rahman, K.F. .Determination and analysis of optical constants for thermally evaporated PbSe thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2011(3):318-323. |
| [8] | Yu. A. Ivanova;D. K. Ivanou;E. A. Streltsov .Electrodeposition of PbSe onto n-Si(100) wafers[J].Electrochimica Acta,2008(15):5051-5057. |
| [9] | Sarkar SK;Kababya S;Vega S;Cohen H;Woicik JC;Frenkel AI;Hodes G .Effects of solution pH and surface chemistry on the postdeposition growth of chemical bath deposited PbSe nanocrystalline films[J].Chemistry of Materials: A Publication of the American Chemistry Society,2007(4):879-888. |
| [10] | Enue Barrios-Salgado;M.T.S. Nair;P.K. Nair;Ralph A. Zingaro .Chemically deposited thin films of PbSe as an absorber component in solar cell structures ;[J].Thin Solid Films,2011(21):7432-7437. |
| [11] | Mageshwari, K.;Sathyamoorthy, R. .Influence of substrate temperature on the physical properties of thermally evaporated nanocrystalline bismuth sulfide thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2012(12):2029-2034. |
| [12] | 田颖萍,范洪远,成靖文.氮氩流量比对磁控溅射TiN薄膜生长织构的影响[J].表面技术,2012(03):19-21,25. |
| [13] | 周爱萍,高金霞,孙艳.Nb掺杂ZnO透明导电薄膜的结构以及光电性能研究[J].人工晶体学报,2012(04):1015-1018. |
| [14] | 詹勇军,吴卫东,王锋,白黎,唐永建,谌家军.NaF薄膜的脉冲激光沉积法制备与结构研究[J].强激光与粒子束,2007(04):633-637. |
| [15] | 郭金玲,沈岳年,SHE Yue-nian.用Scherrer公式计算晶粒度应注意的几个问题[J].内蒙古师范大学学报（自然科学汉文版）,2009(03):357-358. |
| [16] | Arivazhagan, V.;Manonmani Parvathi, M.;Rajesh, S. .Impact of thickness on vacuum deposited PbSe thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2012(8):1092-1096. |
| [17] | Khan, S.A.;Khan, Z.H.;El-Sebaii, A.A.;Al-Marzouki, F.M.;Al-Ghamdi, A.A. .Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films[J].Physica, B. Condensed Matter,2010(16):3384-3390. |
| [18] | 钟志有,张腾,顾锦华,孙奉娄.磁控溅射沉积掺锡氧化铟透明导电薄膜的光电性能研究[J].人工晶体学报,2013(04):647-652,670. |
| [19] | 葛启函,邓宏,陈航,徐自强.不同掺Al3+浓度的ZnO：Al薄膜性能研究[J].电子科技大学学报,2006(02):253-256. |
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