欢迎登录材料期刊网

材料期刊网

高级检索

以Zn∶ Zr为靶材,利用直流反应磁控溅射法制备了ZnO∶ Zr透明导电薄薄膜.研究了沉积压强对ZnO∶ Zr薄膜形貌、结构、光学及电学性能的影响.实验结果表明所制备的ZnO∶ Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向.沉积压强对ZnO∶ Zr薄膜的晶化程度、形貌、生长速率和电阻率影响很大,而对其光学性能如透光率、光学带隙及折射率影响不大.当沉积压强为2Pa时,ZnO∶ Zr薄膜的电阻率达到最小值2.0×10-3Ω ·cm,其可见光平均透过率和平均折射率分别为83.2%和1.97.

参考文献

[1] Tadatsugu Minami;Toshihiro Miyata .Present status and future prospects for development of non- or reduced-indium transparent conducting oxide thin films[J].Thin Solid Films,2008(4):1474-1477.
[2] Tadatsugu Minami .Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(17):5822-5828.
[3] Kim H.;Horwitz JS.;Kim WH.;Makinen AJ.;Kafafi ZH.;Chrisey DB. .Doped ZnO thin films as anode materials for organic light-emitting diodes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):539-0.
[4] Lv M;Xiu XW;Pang ZY;Dai Y;Han SH .Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(16):5687-5692.
[5] Low-temperature Deposition Of Transparent Conducting Zno:zr Films On Pet Substrates By Dc Magnetron Sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(11):6054-6056.
[6] Feng Cao;Yiding Wang;Lei Li .Influence of O_2/Ar ratio on the structural, electrical, and optical properties of transparent conductive zirconium-doped ZnO films prepared by radiofrequency sputtering[J].Scripta materialia,2009(3):231-233.
[7] Zhang, HF;Liu, HF;Feng, L .Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(6):833-836.
[8] Paul GK.;Bandyopadhyay S.;Sen SK.;Sen S. .Structural, optical and electrical studies on sol-gel deposited Zr doped ZnO films[J].Materials Chemistry and Physics,2003(1):71-75.
[9] H. Kim;J. S. Horwitz;G. Kushto .Effect of film thickness on the properties of indium tin oxide thin films[J].Journal of Applied Physics,2000(10):6021-6025.
[10] Hao XT.;Zhang DH.;Yang TL.;Ma HL.;Yang YG.;Cheng CF.;Huang J.;Ma J. .Thickness dependence of structural, optical and electrical properties of ZnO : Al films prepared on flexible substrates[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/2):137-142.
[11] Nb-doped ZnO transparent conducting films fabricated by pulsed laser deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(13/14):6460.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%