采用磁控溅射制备了Ta/NiFe/IrMn/Ta薄膜,研究了反铁磁IrMn的溅射功率和铁磁层NiFe厚度对多层膜交换偏置场的影响。在反铁磁IrMn中插入MgO,发现MgO含量对交换偏置场有一定影响。随着MgO含量的增加,多层膜的交换偏置场逐渐增大,当MgO的含量约为2.5%交换偏置场达到最大值。随着MgO含量进一步增加交换偏置场下降。在IrMn中插入适量的MgO可以有效地增加交换偏置场。
The Ta/NiFe/IrMn/Ta films were prepared by magnetic sputtering.The effects of IrMn sputtering power and magnetic layer＇s thicknesses on the properties of FM/AFM multilayer were studied.The MgO was doped in the IrMn anti-ferromagnetic layer.The MgO doped content in anti-ferromagnetic layer has different effects on the exchange bias.With the increase of the MgO doped content in anti-ferromagnetic,the exchange bias field gradually increased and reached a maximum value at the MgO doped of about 2.5%.Then the exchange bias field can be decreased with a further increase of the MgO doped content.The doping proper amount of MgO in the IrMn anti-ferromagnetic layer can effectively increase the Hex.
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