采用TMCS对超临界干燥后的纳米多孔SiO2薄膜进行疏水处理,利用FTIR、SEM、椭偏仪和LCR测量仪等对薄膜的性能进行表征.研究表明:TMCS修饰后薄膜呈疏水性;薄膜的厚度有所降低,但孔隙率无明显变化;薄膜的实测介电常数值接近理论计算值,为2.0～2.3,且随时间无显著增大.
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