采用液相共沉淀方法,以ZnSO4·7H2O为原料,GaCl3为掺杂化合物,NH4HCO3为沉淀剂合成碱式碳酸锌前驱体,通过在H2气氛下煅烧,制得Ga3+均匀掺杂的纳米氧化锌导电粉体.利用SEM,TEM,XRD,XPS和BET等分析手段对粉体的性能进行表征.结果表明,这种方法合成的导电氧化锌粉体材料颗粒尺寸较小、粒度分布均匀(约在20 nm～40 nm的范围内),颗粒呈类球状形貌,具有较好的分散性能.研究了Ga3+掺杂对氧化锌粉体导电性能的影响.结果表明,在Ga3+掺杂量为2.2mol%时,制得的氧化锌粉体的导电性能最好,体积电阻率达到2.0Ω·cm.
参考文献
| [1] | Peter Greil .Advanced Engineering Ceramics[J].Advanced Materials,2002(10):709-716. |
| [2] | Xudong Wang;Christopher J. Summers;Zhong Lin Wang .Large-Scale Hexagonal-Patterned Growth of Aligned ZnO Nanorods for Nano-optoelectronics and Nanosensor Arrays[J].Nano letters,2004(3):423-426. |
| [3] | Look DC. .Recent advances in ZnO materials and devices[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1/3):383-387. |
| [4] | John. F. Wager .Transparent Electronics[J].Science,2003(5623):1245-1246. |
| [5] | Pan Zhengwei;Dai Zurong;Wang Zhonglin .[J].Science,2001,291:1947. |
| [6] | Wang Zhonglin .[J].Materials Today,2004,6:26. |
| [7] | Jun Zhang;Lingdong Sun;Jialu Yin et al.[J].Chemistry of Materials,2002,14:4172. |
| [8] | Zhuo Wang;Xue-feng Qian;Jie Yin;Zi-kang Zhu .Large-Scale Fabrication of Tower-like,Flower-like,and Tube-like ZnO Arrays by a Simple Chemical Solution Route[J].Langmuir: The ACS Journal of Surfaces and Colloids,2004(8):3441-3448. |
| [9] | Howard M Cyr;Nicholas S Nanovic .[P].US 3089856,1963. |
| [10] | 林元华,张中太,袁方利,李晋林.ZnO导电陶瓷的制备及其性能表征[J].半导体学报,1999(10):867. |
| [11] | G(e)rald Djega-Mariadasson;Vinh H Tran;Monique Bureau Tardy et al.[P].US 4894185,1990. |
| [12] | 杜尚丰;李群艳;陈运法 et al.[J].稀有金属材料与工程,2003,32(z1):698. |
| [13] | Yoshimarul Katsuhiko;Komiya Hideo;Hayashi Takao et al.[P].EP 0597380 A1,1994. |
| [14] | 袁方利,黄淑兰,凌远兵,李晋林.等离子法热解制备导电ZnO陶瓷粉[J].化工冶金,1998(03):212-216. |
| [15] | 李青山,张金朝,宋鹂.共沉淀条件对纳米级Sb/SnO2粒度和电性能的影响[J].应用化学,2002(02):163-167. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%