从CVD法制备SiC的传统先驱体的缺陷和不足出发,较详细地介绍了目前常用的先驱体体系及先驱体的发展趋势,并归纳新型先驱体应具备的特点.
参考文献
| [1] | 葛金余;杜丕一;韩高荣 .SiC薄膜制备工艺进展[J].材料科学与工程,1998,16(01):36. |
| [2] | 彭军.SiC材料与器件[J].半导体技术,1995(05):33. |
| [3] | 宋登元.SiC器件基本制备工艺的原理与发展现状[J].半导体技术,1994(02):5. |
| [4] | 邓世均.高性能陶瓷涂层[M].北京:化学工业出版社,2004 |
| [5] | 张琦,侯蓝田,李葵英,周桂耀.碳化硅内膜空芯传能光纤的研究[J].材料科学与工艺,2003(02):132-135. |
| [6] | 王学华,薛亦渝.薄膜制备新技术及其应用研究[J].真空电子技术,2003(05):65-70. |
| [7] | 韩杰才,张宇民,赫晓东.大尺寸轻型SiC光学反射镜研究进展[J].宇航学报,2001(06):124-132. |
| [8] | Di Gao;Muthu B. J. Wijesundara;Carlo Carraro;Roger T. Howe;Roya Maboudian .Recent Progress Toward a Manufacturable Polycrystalline SiC Surface Micromachining Technology[J].IEEE sensors journal,2004(4):441-448. |
| [9] | Whitmarsh C K;Interrante L V .[P].US 5153295,1992-10-06. |
| [10] | NASLAIN R .Design, preparation and properties of non-oxide CMCs for application in engines and nuclear reactors:an overview[J].Composites Science and Technology,2004,64:155. |
| [11] | Bhat D G;Panos R M.Investigation of the CNTD mechanism and its effect on microstructural properties of SiC and AlN.U.S. Air Force Office of Scientific Research Contract F49620-79-C-0041[J].Final Report,1981 |
| [12] | Motojima S;Yagi H;Iwamori N .[J].Journal of Materials Science Letters,1986,5:13. |
| [13] | Boeglin;Herman J .[P].US 5053255,1991. |
| [14] | Grow J M;Levy R A;Bhaskaran M et al.Low pressure the mical vapor deposition of silicon carbide from ditertiarybutylsilane[J].Journal of the Electrochemical Society,1993,140(10):3001. |
| [15] | Schiling C L;Wesson J P;Williams T C .[J].Ceramic Bulletin,1983,62(08):912. |
| [16] | Chris K Whitmarsh;Leonard V Interrante .Synthesis and structure of a highly branched polycarbosilane derived from (chloromethyl) trichlorosilane[J].Organometallics,1991,10:1336. |
| [17] | 刘荣军,周新贵,张长瑞,曹英斌.CVD法制备SiC先进陶瓷材料研究进展[J].材料工程,2002(07):46-插1. |
| [18] | Cheng Qing Min;Leonard V Interrante;Michael Lienhard .Methylene-bridged carbosilanes and polycarbosilanes as precursors to silicon carbide-from ceramic composites to SiC nanomaterials[J].Journal of the European Ceramic Society,2005,25:233. |
| [19] | Lienhard M.;Wiegand C.;Apple T.;Interrante LV. .Synthesis and characterization of cyano-substituted disilacyclobutane rings and poly(silylenemethylene) polymers[J].Journal of Organometallic Chemistry,2003(1/2):272-280. |
| [20] | Interrante LV.;Rushkin I.;Shen Q.;Liu Q. .POLY(SILYLENEMETHYLENES) - A NOVEL CLASS OF ORGANOSILICON POLYMERS [Review][J].Journal of Organometallic Chemistry,1996(1/2):1-10. |
| [21] | Parka S Y B;Interrantec L V;Farmer B L .The structure of poly ( di-n-propylsilylenemethylene)[J].Polymer,2001,42:4253. |
| [22] | Parkab S Y;Interrantec L V;Farmer B L .The structures of poly (di-n-alkylsilylenemethylene) s[J].Polymer,2001,42:4261. |
| [23] | Starfire Systems 公司的产品手册[M]. |
| [24] | Shen Qionghua;Leo Spitz Maedonald .[P].US 6730802B2,2004-05-04. |
| [25] | Boo J H;Lee U S B;Yu K S et al.High vacuum chemical vapor deposition of cubic SiC thin films on Si (001) substrates using single source precursor[J].Surface and Coatings Technology,2000,131:147. |
| [26] | Boo Jin Hyo;Ustin Scott A;Ho Wilson .Low-temperature epitaxial growth of cubic SiC thin films on Si( 111 ) using supersonic molecular jet of single source precursors[J].THIN SOLID FILMS,1999,343:650. |
| [27] | Boo Jin Hyo;Ustin S A;Ho W .Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-butyldimethylsilane[J].Thin Solid Films,1998,324:124. |
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