涂层导体DyBiO3(DBO)缓冲层的低温制备

稀有金属材料与工程, 2009, 38(5): 901-904.

涂层导体DyBiO3(DBO)缓冲层的低温制备

孙瑞萍 ^1, , 李果 ^2, , 蒲明华 ^3, , 王文涛 ^4, , 赵勇 ^5,

1.西南交通大学,材料先进技术教育部重点实验室,四川,成都,610031

2.西南交通大学,材料先进技术教育部重点实验室,四川,成都,610031

3.西南交通大学,材料先进技术教育部重点实验室,四川,成都,610031

4.西南交通大学,材料先进技术教育部重点实验室,四川,成都,610031

5.西南交通大学,材料先进技术教育部重点实验室,四川,成都,610031

基金项目: 国家重点基础研究发展规划(973计划)(2007CB616906) 国家杰出青年科学基金(50588201) 国家自然科学基金(50672078)

关键词：涂层导体 , DyBiO3缓冲层 , 低温成相

Low Temperature Processing Technology for Preparation of Potential DyBiO3 Buffer Layers of Coated Conductors

通过685～750 ℃之间进行低温成相,在LaAlO3 (LAO)单晶基底上沉积得到了有较大应用前景的涂层导体DyBiO3 (DBO)缓冲层.结果表明:所得的缓冲层c轴取向良好,致密、平整、无裂纹.当温度大于750 ℃时,DBO表面开始变得粗糙.沉积在DBO缓冲层上的YBCO超导层c轴织构的样品,样品表面平整均匀,超导转变温度在90 K左右,临界电流密度大于1 MA/cm2.从工业应用角度讲,低温的缓冲层制备具有极大的经济优势,应用前景更为广泛.

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