坩埚石墨化度对SiC单晶生长过程的影响

稀有金属材料与工程, 2005, 34(12): 1944-1947.

坩埚石墨化度对SiC单晶生长过程的影响

刘军林 ^1, , 高积强 ^2, , 程基宽 ^3, , 杨建峰 ^4, , 乔冠军 ^5,

1.西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049

2.西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049

3.西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049

4.西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049

5.西安交通大学,金属材料强度国家重点实验室,陕西,西安,710049

关键词：物质传输 , 石墨化度 , 单晶生长 , SiC

Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process

研究了用改进Lely法制备SiC单晶的过程中坩埚石墨化度对物质传输和晶体生长速度的影响.在不同温度下进行石墨化处理得到了实验所用的坩埚.用XRD方法定量测定了晶体生长前坩埚的石墨化度,并用SEM分析了晶体生长后坩埚内壁的反应情况.实验结果表明,石墨坩埚在SiC晶体生长过程中是一个非常重要的碳源提供者;当坩埚的石墨化程度较低时,晶体的生长速度快,生长速度由生长温度所控制;随着坩埚石墨化程度的提高,晶体生长速度减慢并由坩埚石墨化度所控制;当石墨化度进一步提高的时候,籽晶被碳化,晶体不能正常生长.

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材料期刊网

坩埚石墨化度对SiC单晶生长过程的影响

Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process

参考文献