用预制膜硒化法制备铜铟硒系太阳能电池的吸收层CIGSe薄膜,用X射线荧光分析(XRF)、扫描电子显微镜(SEM)、X射线衍射分析(XRD)和拉曼谱分析(Raman)以及基于霍尔效应分别测定或观测CIGSe薄膜的成分、表面形貌、结构以及电阻率和少数载流子迁移率,研究了在近玻璃软化点520-560℃区间硒化温度对薄膜成分、表面形貌、结构和电学性能的影响.结果表明:当硒化温度在520-560℃时,CIGSe薄膜的成分和表面形貌保持不变,但是随着硒化温度的升高CIGSe薄膜中有序缺陷相(ODC)和Cu-Se短路相增加,提高了薄膜内的缺陷浓度,使薄膜的少数载流子迁移率降低、电阻率增大.
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