Nc-Si:H薄膜器件的研究

材料导报, 2004, 18(1): 76-79.

Nc-Si:H薄膜器件的研究

韦文生 ^1, , 徐刚毅 ^2, , 王天民 ^3, , 张春熹 ^4,

1.北京航空航天大学理学院材料物理与化学研究中心,北京,100083;北京航空航天大学光电技术研究所,北京,100083

2.中国科学院上海微系统与,信息技术研究所,上海,200050

3.北京航空航天大学理学院材料物理与化学研究中心,北京,100083

4.北京航空航天大学光电技术研究所,北京,100083

基金项目: 高等学校博士学科点专项科研项目(200220006037) 北京航空航天大学校科研和教改项目

关键词： nc-Si:H薄膜 , 隧道二极管 , 异质结二极管 , 变容二极管 , 太阳能电池 , 单电子晶体管 , 发光二极管

A Review of Research on Devices Using nc-Si:H Film

介绍了氢化纳米硅(nc-Si:H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si:H薄膜结构之间的关系,阐述了新型器件的优点.

参考文献

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材料期刊网

Nc-Si:H薄膜器件的研究

A Review of Research on Devices Using nc-Si:H Film

参考文献