欢迎登录材料期刊网

材料期刊网

高级检索

在Cu衬底上用电沉积的方法沉积金属In,再通过硒蒸气硒化处理成功制备了CuInSe2薄膜.用X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)对制备的薄膜进行相组成、微观结构、表面形貌等分析,研究了制备工艺条件对薄膜性能的影响.结果表明:电沉积的In在低温热处理阶段与衬底Cu扩散形成Cu-In合金预制层,预制层在硒化阶段生成CuInSe2,合金中过量Cu生成CuSe表面层,未反应的In转变为Cu16In9,形成Cu衬底/Cu16In9/ CuInse2/CuSe结构.

参考文献

[1] Jehad A M;Shama A;Johnston S et al.Bandlike and Localized Defect States in CulnSe Solar Cells[J].Journal of Physics and Chemistry of Solids,2005,66(11):1855-1857.
[2] Moharram AH.;Salem A.;Hafiz MM. .Electrical properties and structural changes of thermally co-evaporated CuInSe films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/2):61-67.
[3] Muller J;Nowoczin J;Schmitt H .Composition, structure and optical properties of sputtered thin films of CuInSe2[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(2):364-370.
[4] Repins I;Contreras M.Characterization of 19.9% Efficient CIGS Absorbers[A].San Diego,California,USA,2008:11-16.
[5] Darga A;Mencaraglia D .Analysis of Electronic Transport Properties of Thin Film Culn(S,Se)2 Solar Cells Based on Electrodeposition[J].Thin Solid Films,2008,516:6999-7003.
[6] Bhattacharya R N;Fernandez A M .15.4% CuInGaSe-Based Photovoltaic Cells from Electrodeposited Precursors[J].Solar Energy Materials& Sclar Cells,2000,63:367-374.
[7] Winklera M;Griesche J .CISCuT-Solar Cells and Modules on the Basis of CuInS2 on Cu-tape[J].Sclar Energy,2004,77:705-716.
[8] Konovalov I.;Winkler M.;Otte K.;Tober O. .Electrical properties of Cu-In-S absorber prepared on Cu tape (CISCuT)[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):49-58.
[9] Djordjevic J;Rudigier E;Scheer R .Real-time studies of phase transformations in Cu-In-Se-S thin films - 3: Selenization of Cu-In precursors[J].Journal of Crystal Growth,2006(2):218-230.
[10] Oh MS;Kwon MK;Park IK;Baek SH;Park SJ;Lee SH;Jung JJ .Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature[J].Journal of Crystal Growth,2006(1):107-112.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%