在脉冲非平衡磁控溅射环境中,通过提高脉冲靶电压(分别为600、700及800 V)使工作气体Ar获得3种不同强度的异常辉光放电状态(单脉冲峰值靶功率密度分别为10、30及70 W/cm2),并分别制备Cr薄膜.利用SEM、AFM、XRD及TEM等方法研究、比较了非平衡磁控溅射Cr薄膜的微观结构在不同Ar气脉冲异常辉光放电强度条件下的差异.结果表明,随Ar气脉冲异常辉光放电强度的增强:Cr薄膜沉积速率显著提高,薄膜表面粗糙度略有增大,但表面颗粒未出现长大现象,且尺寸均匀、细小,择优生长的Cr(110)晶面的衍射峰强度明显降低,结晶效果逐渐降低.不同异常辉光放电强度条件下制备的Cr薄膜均以柱状方式生长,微观组织呈现出纳米级尺度的晶粒(直径5 ～ 10 nm)镶嵌式分布的形态.
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