室温下采用直流磁控溅射法在玻璃基片上沉积CoTaZr薄膜.利用EDS、SEM、XRD等方法研究溅射气压、功率对CoTaZr薄膜成分、生长形貌和组织结构的影响.结果表明,溅射功率为96W时,沉积制备的薄膜成分随Ar气压变化不大,薄膜成分基本稳定.在溅射气压为2Pa、功率为96W时,成功制备出具有非晶+纳米晶结构的CoTaZr薄膜.在2Pa时,随着功率的增大,薄膜由1区、T区向3区转变;在96W时,随着气压的增大,薄膜由3区向T区或1区转变.
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