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在覆盖金属钛层的陶瓷上,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜.利用扫描电子显微镜、拉曼光谱、X射线衍射,分析了薄膜的结构和表面形貌.测试了类球状微米金刚石聚晶膜的场致电子发射特性.开启电场仅为0.55V/μm,在2.18V/μm的电场下,其场发射电、流密度高达11mA/cm2.对类球状微米金刚石聚晶阵列形成机理和场发射机理进行了研究.

参考文献

[1] Fink R L;Li Tolt Z;Yaniv Z .[J].Surface and Coatings Technology,1998,570:108-109.
[2] Satyanarayana B S;Hart A;Milne W I et al.[J].Applied Physics Letters,1997,1430:71.
[3] Robertson J .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1999,1:17.
[4] Chung S J;Moon J H;Park K C et al.[J].Journal of Applied Physics,1997,4047:82.
[5] Chen Y H;Hu C T;Lin I N .[J].Journal of Applied Physics,1998,3890:84.
[6] Druz B L;Polyakov V I;Karabutov A V et al.[J].Diamond and Related Materials,1998,695:7.
[7] Zhu W;Konchanski G P;Jin S et al.[J].Applied Physics Letters,1995,1157:67.
[8] Obraztsov A N;Pavlovsky L Y;Voldov A P .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1999,674:17.
[9] Lee Y C;Lin S J;Chia C T et al.[J].Diamond and Related Materials,2004,2100:13.
[10] Kobashi K;Watanabe A;Kobayashi A .[J].Diamond and Related Materials,2004,2113:13.
[11] Yang T S;Lai J Y .[J].Diamond and Related Materials,2001,10:2161-2166.
[12] Haubner R;Lux B .[J].Refract Metals Hard Mater,2002,20:93-100.
[13] Baranauskas V.;Peterlevitz AC.;Ceragioli HJ.;Durrant SF.;Tosin MC. .Microcrystalline diamond deposition on a porous silicon host matrix[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(0):171-176.
[14] Chen G H;Cai R Q;Song X M et al.[J].Materials Science and Engneering B,2004,107:233-236.
[15] Buhlmann S. .Characterization of ballas diamond depositions[J].Diamond and Related Materials,1999(2 Mar):194-201.
[16] Xu N S;Latham R V.High Voltage Vacuum Insulation[M].London,UK:Academic Press,1995
[17] Tachibana T;Williams B E;Glass J T .[J].Physical Review B:Condensed Matter,1992,11975:45.
[18] Kiyota H;Higashi M et al.[J].Journal of Applied Physics,2006,094903:99.
[19] Gruen D M;Annu .[J].Rev Mater Sci,1999,211:29.
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