研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法.
The effects of several process parameters, such as substrate temperature, nucleation density, and substrate surface pretreatment, on the simultaneous formation of SiC and diamond under typical growth conditions of diamond by microwave plasma assisted chemical vapor deposition (MPCVD), have been investigated by scanning electron microsco-py ( SEM), X-ray diffraction, and Raman and Fourier-transfer infrared (FTIR) spectroscopy. Results show that no SiC can be detected in the diamond films grown with a high nucleation density, whereas, SiC is detected in the thick dia-mond films grown with a low nucleation density, with or without surface pretreatment of the Si substrates. SEM micro-graphs and FTIR spectra illustrate that SiC is formed on the Si substrate not covered by diamond nuclei or in void regions between diamond nuclei. The formation of SiC and diamond on Si substrates under the growth conditions of diamond by MPCVD is a concurrent competitive deposition process, especially at the initial stage of diamond nucleation and growth. This is an alternative method for the synthesis of diamond-SiC composites by MPCVD.
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