利用磁控溅射法在FTO玻璃上制备了SnS薄膜.采用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计对不同溅射参数下制备的SnS薄膜的晶体结构、表面形貌和光学性能进行研究,确定出制备SnS薄膜的最优溅射参数.结果表明:溅射功率为28 W,沉积气压在2.5 Pa时,制备出的SnS薄膜在(111)晶面具有最好的择优取向,薄膜微观形貌呈单片树叶状,晶粒粒径约370 nm,晶粒分布均匀,薄膜表面光滑致密;最优溅射参数下制备的SnS薄膜的吸收系数可达到105 cm-1,比其他方法制备的SnS薄膜的吸收系数值高,禁带宽度为1.48 eV,与半导体太阳能电池所要求的最佳禁带宽度(1.5 eV)十分接近.
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