采用脉冲激光沉积技术在蓝宝石衬底上制备了不同Mn掺杂浓度的ZnO薄膜(ZnO: Mn),研究了与生长相关的浅缺陷能级对薄膜磁性的作用.结果表明:所制备的ZnO: Mn薄膜均具有高度c轴择优取向,且具有室温铁磁性.随Mn含量增加,薄膜结晶质量逐渐提高,晶粒尺寸明显增大,单位磁性离子磁矩逐渐减小.薄膜所显示出的铁磁性可归结为材料结构缺陷的本质反映.薄膜导电特性变化反映了薄膜生长过程所决定的晶粒内部和晶粒边界缺陷密度变化的竞争,与此对应,激活能的变化反映了晶粒内部费米能级位置先升高而后降低.薄膜的载流子传输在低温下满足变程跳跃电导机制,该机制和材料的铁磁性紧密相关.近邻Mn离子比例的增加将对薄膜铁磁性的减小产生贡献.
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