采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V 1.7V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60％降低到20％,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.
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