研究了层状结构氧化石墨的片状尺度、结晶态及不同表面官能团含量对其电化学电容性能的影响.以光谱纯和化学纯石墨为原料,采用改进的Hummer法制备氧化石墨(GO),并将部分氧化石墨球磨.用FT-IR和XPS,对氧化石墨表面官能团进行了分析;XRD、FE-SEM和氮气吸附等温线,对氧化石墨结构和形貌进行了分析.利用恒电流充放电、循环伏安和交流阻抗等电化学测试方法研究了氧化石墨结构与电化学电容性能的关系.结果表明,光谱纯氧化石墨制备的电容器比电容较小,为18.8F/g;化学纯石墨制备的氧化石墨球磨后比电容最高,可达到119.7F/g.
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