材料导报, 2012, 26(z1): 406-409.
炼镁还原罐材质及服役寿命研究进展
郭云春 1, , 李国学 2, , 蒋鲜明 3, , 袁海军 4, ,{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"在薄膜晶体管液晶显示器件(TFT-LCD)的制作过程中,Mura 是一种常见的不良现象,它可以直接影响到产品的画面品质.本文结合生产工艺的实际情况,采用宏观微观检查设备 Macro/Micro(M/M)、扫描电子显微镜(SEM)、聚焦离子束测试仪(FIB)等设备进行检测分析,研究了产品开发过程中出现的 Sand Mura 问题.实验结果表明,Sand Mura发生的主要原因是像素电极 ITO 在刻蚀过程中由于过刻发生断裂,导致在通电时该处液晶分子偏转发生异常,进而阻挡了光的透过而形成暗点；通过变更 ITO 薄膜的厚度及刻蚀时间等一系列措施,防止了像素电极在 PVX 过孔处因过刻引起的断裂,不良发生率降至0．3％,产品质量得到了很大的提高.此外,过孔设计优化方案有助于新产品开发阶段避免该不良的发生,为以后相关问题的研究奠定了一些理论基础.","authors":[{"authorName":"史高飞","id":"347fe16c-a366-4c8f-b896-966241be7501","originalAuthorName":"史高飞"},{"authorName":"沈奇雨","id":"06dd7720-47c4-438d-b2c5-67fa9bb6ee5e","originalAuthorName":"沈奇雨"},{"authorName":"许徐飞","id":"46b9f0e7-e7a7-434c-886d-91ad7c5c5594","originalAuthorName":"许徐飞"},{"authorName":"宋洁","id":"46919f1f-e961-47a0-978b-f826300a600d","originalAuthorName":"宋洁"},{"authorName":"赵娜","id":"7dd81b5b-6cdc-420c-8f30-655f6577d22f","originalAuthorName":"赵娜"},{"authorName":"韩基挏","id":"2b24de01-4ad9-4279-9c79-ae785bdc2b85","originalAuthorName":"韩基挏"},{"authorName":"李乘揆","id":"7b8c42f1-3e70-463b-b159-9b1db8d2f7ed","originalAuthorName":"李乘揆"}],"doi":"10.3788/YJYXS20153002.0257","fpage":"257","id":"defd472c-ecb2-402b-92c5-672b47567d65","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"b5505bfd-5677-4c4b-933a-6e1a78e879cb","keyword":"TFT-LCD","originalKeyword":"TFT-LCD"},{"id":"83fc3e6d-f2e9-47ed-8e3a-fbc29f5b8632","keyword":"Sand Mura","originalKeyword":"Sand Mura"},{"id":"03e7f95a-a999-4bf6-bfe2-c4934f2c6c03","keyword":"过刻","originalKeyword":"过刻"},{"id":"56a59365-a0a5-417a-a172-0ff2cefea0a1","keyword":"厚度","originalKeyword":"厚度"},{"id":"eeb6aa51-dca4-4929-9f58-c793269cfa4f","keyword":"刻蚀时间","originalKeyword":"刻蚀时间"}],"language":"zh","publisherId":"yjyxs201502012","title":"TFT-LCD 制程中 Sand Mura 的失效模式分析及改善研究","volume":"","year":"2015"},{"abstractinfo":"铁电ＰＺＴ薄膜的极化印刻（ｉｍｐｒｉｎｔｉｎｇ）是ＰＺＴ不挥发存储器失效的重要原因之一．本文研究了不同钇量改性的ＰＺＴ（４０／６０）铁电薄膜在高温（１２０℃）和偏置电压下的极化印刻特性，发现适量的钇掺杂，改善了ＰＺＴ薄膜电容器单元的极化印刻．","authors":[{"authorName":"仇萍荪","id":"f3b5acd1-4ea4-47d2-af6c-0730bd3bc573","originalAuthorName":"仇萍荪"},{"authorName":"罗维根","id":"8f1cc29a-4ea6-4bb3-b5e3-4363c3427843","originalAuthorName":"罗维根"},{"authorName":"丁爱丽","id":"945d4a6e-2194-45ed-be91-51ff58250fc3","originalAuthorName":"丁爱丽"}],"categoryName":"|","doi":"","fpage":"928","id":"a1836777-1362-4a8f-a139-4de537dcb2e3","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"83a8b287-fab2-4ca8-aead-4fbf309dcb76","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"2a3ddbf5-6aa8-464c-a138-9dc5d6646034","keyword":" Y-dopped PZT（40/60） thin films","originalKeyword":" Y-dopped PZT（40/60） thin films"},{"id":"4a1f63f0-f1dc-4d7e-80bd-d240d1925ad9","keyword":" imprinting","originalKeyword":" imprinting"}],"language":"zh","publisherId":"1000-324X_2001_5_10","title":"钇改性PZT薄膜的极化印刻研究","volume":"16","year":"2001"},{"abstractinfo":"铁电PZT薄膜的极化印刻(imprinting)是PZT不挥发存储器失效的重要原因之一.本文研究了不同钇量改性的PZT(40/60)铁电薄膜在高温(120℃)和偏置电压下的极化印刻特性,发现适量的钇掺杂,改善了PZT薄膜电容器单元的极化印刻.","authors":[{"authorName":"仇萍荪","id":"58a94362-0a88-40ca-8cb3-b91a5bd26a0f","originalAuthorName":"仇萍荪"},{"authorName":"罗维根","id":"625a2a53-bd42-46e3-a817-79b7ab219149","originalAuthorName":"罗维根"},{"authorName":"丁爱丽","id":"b29598d5-b7ac-4a9c-879b-6d4ff181b2f0","originalAuthorName":"丁爱丽"}],"doi":"10.3321/j.issn:1000-324X.2001.05.024","fpage":"928","id":"3a507de0-0d18-432d-9f03-8846985bb3e5","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c2feba49-e43e-4a34-b854-a1c4e18d6f37","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"7a84f13a-478b-4faa-a8be-fa64b7c3a24e","keyword":"Y-PZT薄膜","originalKeyword":"Y-PZT薄膜"},{"id":"d6b102af-0d30-427c-8b24-cce3d3653134","keyword":"印刻(imprinting)","originalKeyword":"印刻(imprinting)"}],"language":"zh","publisherId":"wjclxb200105024","title":"钇改性PZT薄膜的极化印刻研究","volume":"16","year":"2001"},{"abstractinfo":"利用弹塑性有限元计算了内刻槽弹体端部J积分,为刻槽弹体材料研究提供了参考.","authors":[{"authorName":"宋顺成","id":"65858d0c-f59e-4c48-95f4-ca18f182ee64","originalAuthorName":"宋顺成"},{"authorName":"袁书强","id":"e019cfc9-27bf-49d6-97a9-84ac09f65754","originalAuthorName":"袁书强"},{"authorName":"周重光","id":"37860877-e454-4628-a2f9-b2f69b84b650","originalAuthorName":"周重光"},{"authorName":"罗铭蔚","id":"b7efcf6a-dba1-4edb-ac07-c0791bc9ad47","originalAuthorName":"罗铭蔚"},{"authorName":"王建军","id":"0e92f06f-faa8-4d80-b30a-6c29da57fcbc","originalAuthorName":"王建军"}],"doi":"10.3969/j.issn.1004-244X.2000.02.006","fpage":"28","id":"5da92990-6218-48c1-b235-a2093ffa706a","issue":"2","journal":{"abbrevTitle":"BQCLKXYGC","coverImgSrc":"journal/img/cover/BQCLKXYGC.jpg","id":"4","issnPpub":"1004-244X","publisherId":"BQCLKXYGC","title":"兵器材料科学与工程 "},"keywords":[{"id":"1d39cfb1-d037-49e4-83aa-c5575081cb67","keyword":"弹体","originalKeyword":"弹体"},{"id":"08d48074-ff78-405e-bc78-476566e71498","keyword":"弹塑性有限元","originalKeyword":"弹塑性有限元"},{"id":"5dd2cc3c-f01d-45f3-ac80-d7080d2f4351","keyword":"J积分","originalKeyword":"J积分"}],"language":"zh","publisherId":"bqclkxygc200002006","title":"内刻槽弹体槽端J积分有限元弹塑性计算","volume":"23","year":"2000"},{"abstractinfo":"介绍了传统标牌制作工艺的情况,对激光标刻的原理和现状进行了描述,并从工艺、生产以及环境适应方面论证了激光标刻制作标牌的优势.按照军用设备环境试样方法,对激光标刻制备的标牌进行高低温、盐雾、湿热和霉菌试验,并与平面着色工艺制作的标牌进行比较,证明激光标刻工艺制作标牌适用于航空领域.","authors":[{"authorName":"许海东","id":"32660a5e-8bf3-4c64-b563-c9a0251220f5","originalAuthorName":"许海东"},{"authorName":"戎馨亚","id":"60d20e1d-6a5f-48e7-bcfa-8eedc758f34f","originalAuthorName":"戎馨亚"}],"doi":"10.3969/j.issn.1001-3849.2017.06.007","fpage":"29","id":"5a2769c2-f954-4142-b354-9d6090622af3","issue":"6","journal":{"abbrevTitle":"DDYJS","coverImgSrc":"journal/img/cover/DDYJS.jpg","id":"20","issnPpub":"1001-3849","publisherId":"DDYJS","title":"电镀与精饰 "},"keywords":[{"id":"ed3e8850-928f-471d-a5e6-bbdebe644df9","keyword":"标牌","originalKeyword":"标牌"},{"id":"4d339a9f-8dbc-4c78-b636-7ad26ab3f548","keyword":"激光标刻","originalKeyword":"激光标刻"},{"id":"f86fe297-cea8-410b-be72-10c650fcec98","keyword":"平面着色","originalKeyword":"平面着色"},{"id":"f3f08d6f-1121-4de8-80d4-341158473f39","keyword":"环境试验","originalKeyword":"环境试验"}],"language":"zh","publisherId":"ddjs201706007","title":"激光标刻技术在航空标牌领域的应用","volume":"39","year":"2017"},{"abstractinfo":"在立式感应加热的氮化物MOCVD反应室中, 提出了一种刻槽结构的基座;利用有限元法,给出了使衬底温度分布最均匀的槽的位置和大小.与传统的基座相比,这种刻槽优化后的基座,使衬底温度分布的均匀性显著提高.另外,通过对基座温度随加热时间变化的分析,发现刻槽基座的热传导规律,即刻的槽改变了基座中感应产生热量的热传导方向,衬底中的热量是由槽上下基座部分传递而来的,且随时间的增大,基座的温度趋于恒定,衬底的温度趋于均匀,均匀的衬底温度有利于提高生长薄膜的质量.","authors":[{"authorName":"李志明","id":"68befc88-9fa4-43da-b404-eca3161d87d2","originalAuthorName":"李志明"},{"authorName":"郝跃","id":"82cd0513-33e6-4ce9-8b45-174934a4a6b5","originalAuthorName":"郝跃"},{"authorName":"张进成","id":"d65d4b4e-7733-43d6-8c09-11d0fc36010b","originalAuthorName":"张进成"},{"authorName":"陈炽","id":"94a5eef9-312a-4b6e-aa45-3b9d9f22ca8b","originalAuthorName":"陈炽"},{"authorName":"薛军帅","id":"c2facef2-72aa-4918-8713-39c747b2d658","originalAuthorName":"薛军帅"},{"authorName":"常永明","id":"82e03fa1-21da-43ed-b343-50cbfff6db9c","originalAuthorName":"常永明"},{"authorName":"许晟瑞","id":"9fcf6681-91b5-46fd-bca6-798787a38b46","originalAuthorName":"许晟瑞"},{"authorName":"毕志伟","id":"75186115-babe-482c-842a-b8fa82ed2ec0","originalAuthorName":"毕志伟"}],"doi":"","fpage":"1072","id":"f8447d3a-6ba1-424e-b358-b87a661af090","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"c626fc93-6772-4537-a98c-324bb8ee66aa","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"b1d5e0c8-f97c-4862-a23a-6556cbd05859","keyword":"感应加热","originalKeyword":"感应加热"},{"id":"3aae6750-a3d8-4884-9ef6-165e2170ef57","keyword":"热分析","originalKeyword":"热分析"},{"id":"dd1c1fc9-cad4-4ca4-b0fc-e0fabd430dee","keyword":"基座","originalKeyword":"基座"}],"language":"zh","publisherId":"rgjtxb98201004048","title":"立式MOCVD反应室中一种刻槽基座的热分析","volume":"39","year":"2010"},{"abstractinfo":"用中间相沥青作碳源,硅胶水溶液作造孔剂,采用胶体印刻法制得一系列中孔碳.实验发现当适量纳米级硅源添加到中间相沥青中,会在彼此颗粒间形成一定的纳米孔道,从而导致中间相沥青在炭化过程中没有沥青由固相向液相转化的过程.结果表明:碳硅比、印刻温度以及中间相沥青的基本物化性质都将对中孔碳的孔结构发生重要影响.且制得比表面积和孔容分别为482m2/g和1.62cm3/g的中孔碳.","authors":[{"authorName":"刘颖","id":"6bc27e07-e54d-4c78-a75a-20f34369bbd5","originalAuthorName":"刘颖"},{"authorName":"詹亮","id":"df272e23-d066-4405-8a2b-78d762ecdc14","originalAuthorName":"詹亮"},{"authorName":"张睿","id":"65afb109-b9d1-43d5-818a-39f697903d86","originalAuthorName":"张睿"},{"authorName":"乔文明","id":"c36c83a6-75d4-4786-91d2-c635a7364de2","originalAuthorName":"乔文明"},{"authorName":"梁晓怿","id":"bd98071e-82de-4fe6-b250-10f93327e4f8","originalAuthorName":"梁晓怿"},{"authorName":"凌立成","id":"c902714b-05cd-4983-8e77-eb9db1608071","originalAuthorName":"凌立成"}],"doi":"10.3969/j.issn.1007-8827.2007.03.011","fpage":"259","id":"6a6d048d-d95b-40d5-8cba-6016b5b544dd","issue":"3","journal":{"abbrevTitle":"XXTCL","coverImgSrc":"journal/img/cover/XXTCL.jpg","id":"70","issnPpub":"1007-8827","publisherId":"XXTCL","title":"新型炭材料"},"keywords":[{"id":"5d1ddf7b-4fc7-4da4-8b2a-998f8bd7d26d","keyword":"中孔碳","originalKeyword":"中孔碳"},{"id":"eccf9184-cb50-42a5-a291-020b165df4da","keyword":"印刻","originalKeyword":"印刻"},{"id":"90384c92-5d53-40b9-8741-c8043e0293b1","keyword":"中间相沥青","originalKeyword":"中间相沥青"}],"language":"zh","publisherId":"xxtcl200703011","title":"印刻法制备中间相沥青基中孔炭","volume":"22","year":"2007"},{"abstractinfo":"铸锭中过高的杂质浓度是影响铸造多晶硅太阳电池效率的主要因素之一.铸锭生长过程中的杂质主要有C、N、O、金属离子及固体颗粒SiC和Si3 N4.这些杂质能够降低晶片中少数载流子的寿命及太阳电池的填充因子；同时固体颗粒会造成切片过程的断线和晶片表面产生划痕.设计了一种新的方法生长大晶粒多晶硅,对石墨垫板进行刻槽处理,并采用数值模拟的方法模拟了该生长过程杂质的传输.模拟结果表明,刻槽的深度明显影响着初始生长时结晶界面上O、C和N的分布；同时刻槽深度越大,生长速率越快,越能够抑制晶体中SiC和Si3N4的形成.","authors":[{"authorName":"季尚司","id":"afd29d51-bb6c-4fe3-8955-075951f65e82","originalAuthorName":"季尚司"},{"authorName":"左然","id":"da5bdbf6-4bfc-4223-b5bb-050f97d716ec","originalAuthorName":"左然"},{"authorName":"苏文佳","id":"d274c025-a085-4725-96c7-8d93a1d1f227","originalAuthorName":"苏文佳"},{"authorName":"韩江山","id":"310f3b55-cf7b-4397-abde-0795bf17e214","originalAuthorName":"韩江山"}],"doi":"","fpage":"47","id":"f8239e8a-d6f9-4574-bf00-abb540edac33","issue":"16","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"c48d0c0e-cae7-41c5-9656-3b530bae5fb7","keyword":"铸造多晶硅","originalKeyword":"铸造多晶硅"},{"id":"fd119350-bf13-4d6f-9ab4-2f4e87e4d703","keyword":"点冷却","originalKeyword":"点冷却"},{"id":"edd86fd0-8631-40fa-8df9-614c07d34006","keyword":"杂质传输","originalKeyword":"杂质传输"},{"id":"1d1f4b95-02bf-4fb1-9be2-60b19bdb4217","keyword":"数值模拟","originalKeyword":"数值模拟"}],"language":"zh","publisherId":"cldb201316013","title":"石墨垫板刻槽对生长大晶粒多晶硅杂质传输的影响","volume":"27","year":"2013"},{"abstractinfo":"用光学显微镜和扫描电镜对18Cr-18Mn-0.7N高氮奥氏体钢固溶处理后的退火孪晶界及低温脆断中的退火孪晶界断面进行了观察和分析.结果表明,高氮奥氏体钢固溶处理时形成大量退火孪晶,退火孪晶界上存在微米高度的台阶,同一退火孪晶界上的台阶可以合并和分解,取向也在不断变化.退火孪晶界断面上存在折线状台阶花样,折线的首、末两端均位于断面边缘即晶界上;每根折线由三根取向不同的直线段依次圆滑连接而成,每根直线段分别与一组形变迹线平行,而相邻直线段间成120°角;数根折线以晶界上的同一点为圆心,形成一组同心半圆形花样,断裂刻面上的这种折线状台阶可作为退火孪晶界断裂刻面的判断依据.","authors":[{"authorName":"刘世程","id":"5c3ee9ae-3ef2-4549-8bab-1877d717d282","originalAuthorName":"刘世程"},{"authorName":"刘德义","id":"79accd0b-2fe3-474b-9734-4d45453628d5","originalAuthorName":"刘德义"},{"authorName":"陈汝淑","id":"5d31bf28-a181-4a6a-88e6-78e25fbafb33","originalAuthorName":"陈汝淑"},{"authorName":"戴雅康","id":"537cf09c-9ff3-4327-b759-fd06ae431a1a","originalAuthorName":"戴雅康"}],"doi":"10.3969/j.issn.1009-6264.2005.04.010","fpage":"33","id":"9fe2d09e-40c4-4c66-907b-c10b9d3ed0e6","issue":"4","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"a703211e-8e71-4e51-9a50-018774d5dc50","keyword":"高氮奥氏体钢","originalKeyword":"高氮奥氏体钢"},{"id":"ca6bfac0-4882-4d74-835f-65bbe71f96c1","keyword":"低温脆断","originalKeyword":"低温脆断"},{"id":"1b6ebfed-8c5b-49b9-8a77-9afdc724b4f5","keyword":"退火孪晶界断面","originalKeyword":"退火孪晶界断面"},{"id":"41056d97-78bf-4457-aa21-4a29bda909fa","keyword":"台阶","originalKeyword":"台阶"},{"id":"6a0f8fb1-760b-4fe9-bf11-cabe58af031b","keyword":"形变迹线","originalKeyword":"形变迹线"}],"language":"zh","publisherId":"jsrclxb200504010","title":"高氮奥氏体钢中退火孪晶界及其断裂刻面的特征","volume":"26","year":"2005"},{"abstractinfo":"用数值方法比较了圆筒外表面刻环形窄槽底端部与实心圆柱体中心处圆盘状窄槽底端部的应力分布,证明二者仅差-个常系数,从而以带圆盘状裂纹实心圆柱体的解为基础,给出了圆筒外表面刻环形窄槽底端部应力强度因子K1的有限元分析,为弹丸控制破片刻槽深度和刻槽宽度及弹体材料性能研究提供了重要参考.","authors":[{"authorName":"宋顺成","id":"d237149f-cfb7-414a-a8e3-469e33fe5ba5","originalAuthorName":"宋顺成"},{"authorName":"袁书强","id":"caa97d1d-c44d-430a-b094-4e776d670b1f","originalAuthorName":"袁书强"},{"authorName":"周重光","id":"80d94736-1792-4c3e-9cb2-69bff3a8754a","originalAuthorName":"周重光"},{"authorName":"罗明蔚","id":"73b9c257-6228-491b-a5e0-62eadc78cd6e","originalAuthorName":"罗明蔚"}],"doi":"10.3969/j.issn.1004-244X.2000.01.003","fpage":"12","id":"0f0d8110-44e1-45d1-bab6-e17d0b6ba56b","issue":"1","journal":{"abbrevTitle":"BQCLKXYGC","coverImgSrc":"journal/img/cover/BQCLKXYGC.jpg","id":"4","issnPpub":"1004-244X","publisherId":"BQCLKXYGC","title":"兵器材料科学与工程 "},"keywords":[{"id":"80476b0b-68c4-4feb-bf46-2601649bbb29","keyword":"圆筒刻槽","originalKeyword":"圆筒刻槽"},{"id":"34eb860e-6854-49b3-b274-e61efc397246","keyword":"有限元:应力强度因子","originalKeyword":"有限元:应力强度因子"}],"language":"zh","publisherId":"bqclkxygc200001003","title":"圆筒外表面刻环型窄槽底端部应力强度因子K1的数值计算","volume":"23","year":"2000"}],"totalpage":113,"totalrecord":1122}