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采用非循环直流喷射(直喷式)直流电弧等离子化学气相沉积法,在Ar/H2/CH4气氛下,成功制备了金刚石单晶外延层.试验采用的是3 mm×3 mm×1.2 mm的高温高压Ib型金刚石单晶衬底.研究了不同衬底温度和甲烷浓度对金刚石单晶外延层的形貌,速率和晶体质量的影响.采用光学显微镜,激光共聚焦表征了样品的形貌,利用千分尺测量其生长速率,利用Raman表征其晶体质量,采用OES诊断Ar/H2/CH4等离子气氛下C2、CH与Hβ的相对浓度.研究表明,温度和甲烷浓度对单晶刚石形貌和质量产生了明显的影响.在衬底为温度980℃,甲烷浓度在1.5%的条件下,生长速率达到了36 μm/h,并且晶体质量较好(半高宽仅为1.88 cm-1).同时发现生长参数对金刚石单晶外延层的生长模式有着显著地影响.

参考文献

[1] 顾长志.晶粒尺寸和取向对金刚石膜热导率的影响[J].人工晶体学报,1997(03):327.
[2] Hausmann, B.J.M.;Bulu, I.B.;Deotare, P.B.;McCutcheon, M.;Venkataraman, V.;Markham, M.L.;Twitchen, D.J.;Lon?ar, M. .Integrated high-quality factor optical resonators in diamond[J].Nano letters,2013(5):1898-1902.
[3] Barbara A. Fairchild;Paolo Olivero;Sergey Rubanov;Andrew D. Greentree;Felix Waldermann;Robert A. Taylor;Ian Walmsley;Jason M. Smith;Shane Huntington;Brant C. Gibson;David N. Jamieson;Steven Prawer .Fabrication Of Ultrathin Single-crystal Diamond Membranes[J].Advanced Materials,2008(24):4793-4798.
[4] 刘杰,黑立富,陈广超,李成明,唐伟忠,吕反修.贫氢富氩气氛下超纳米金刚石薄膜的生长[J].新型炭材料,2013(02):134-139.
[5] J. Liu;L.F. Hei;G.C. Chen;C.M. Li;J.H. Song;F.X. Lu.Mechanical properties of ultrananocrystalline diamond films modified by hydrogen concentration in deposition atmosphere[J].Surface & Coatings Technology,2013:8-12.
[6] F.J. Hernandez Guillen;K. Janischowsky;J. Kusterer .Mechanical characterization and stress engineering of nanocrystalline diamonds films for MEMS applications[J].Diamond and Related Materials,2005(3/7):411-415.
[7] J. Achard;F. Silva;O. Brinza .Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals[J].Diamond and Related Materials,2007(4/7):685-689.
[8] A.B. Muchnikov;A.L Vikharev;A.M. Gorbachev .Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations[J].Diamond and Related Materials,2010(5/6):432-436.
[9] 李彬,闫占奇,李浩,韩晓泉,吕反修,陈广超,李宏.直流喷射电弧等离子体制备金刚石单晶的研究[J].人工晶体学报,2012(02):279-283.
[10] Yan CS;Vohra YK;Mao HK;Hemley RJ .Very high growth rate chemical vapor deposition of single-crystal diamond.[J].Proceedings of the National Academy of Sciences of the United States of America,2002(20):12523-12525.
[11] F. Silva;J. Achard;O. Brinza .High quality, large surface area, homoepitaxial MPACVD diamond growth[J].Diamond and Related Materials,2009(5/8):683-697.
[12] LF. Hei;J. Liu;CM. Li.Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD[J].Diamond and Related Materials,2012:77-84.
[13] Jocelyn Achard;Alexandre Tallaire;Ricardo Sussmann;Francois Silva;Alix Gicquel .The control of growth parameters in the synthesis of high- quality single crystalline diamond by CVD[J].Journal of Crystal Growth,2005(3/4):396-405.
[14] Teraji T.;Mitani S.;Ito T. .High rate growth and luminescence properties of high-quality homoepitaxial diamond (100) films[J].Physica Status Solidi, A. Applied Research,2003(2):395-406.
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