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介绍了ZnO基半导体薄膜材料的基本性质和制备手段,综述了其在发光方面及磁性方面的研究进展.详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨.

参考文献

[1] Kim Kwang-Joo;Park Young-Ran .[J].Applied Physics Letters,2001,78(04):475.
[2] Zhang SB.;Yan YF.;Wei SH. .The thermodynamics of codoping: how does it work?[J].Physica, B. Condensed Matter,2001(0):135-139.
[3] 杨秀健,施朝淑,许小亮.纳米ZnO和ZnO∶Eu3+的表面效应及发光特性[J].物理学报,2002(12):2871-2874.
[4] Xue ZY.;Zhang DH.;Wang QP.;Wang JH. .The blue photoluminescence emitted from ZnO films deposited on glass substrate by rf magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):126-129.
[5] Mitra A.;Thareja RK. .Photoluminescence and ultraviolet laser emission from nanocrystalline ZnO thin films[J].Journal of Applied Physics,2001(4):2025-2028.
[6] 刘舒曼,刘峰奇,张志华,郭海清,王占国.ZnO:Tb纳米晶的协同发光现象[J].物理学报,2000(11):2307-2309.
[7] Fu ZX.;Liao GH.;Wu ZQ.;Lin BX. .The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates[J].Journal of Crystal Growth,1998(3):316-321.
[8] Lu YM.;Liu WY.;Yang JS.;Hwang WS. .Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering[J].Materials Chemistry and Physics,2001(2):269-272.
[9] Jin Z et al.[J].Applied Physics Letters,2001,78:3824.
[10] Kyoo H K;Rachmat A W;Badrul M .[J].Materials Letters,2006,60:1931.
[11] 宋永梁,季振国,刘坤,王超,向因,叶志镇.热处理参数对溶胶-凝胶法制备氧化锌薄膜特性的影响[J].物理学报,2004(02):636-639.
[12] 徐伟中,叶志镇,周婷,赵炳辉,朱丽萍,黄靖云.MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J].半导体学报,2005(01):38-41.
[13] Joseph M;Tabata H;Kawai T .[J].Japanese Journal of Applied Physics,1999,38(11A):L1205.
[14] Srikant V.;Clarke DR. .On the optical band gap of zinc oxide[J].Journal of Applied Physics,1998(10):5447-5451.
[15] Hummer K.[J].Phys State Solidi,1973(56):249.
[16] Joseph M.;Saeki H.;Ueda K.;Kawai T.;Tabata H. .Fabrication of the low-resistive p-type ZnO by codoping method[J].Physica, B. Condensed Matter,2001(0):140-148.
[17] Aoki T et al.[J].Applied Physics Letters,2000,76(22):3257.
[18] Ryu Y R et al.[J].Journal of Crystal Growth,2000,216:310.
[19] Ryu YR.;White HW.;Kim WJ. .Fabrication of homostructural ZnO p-n junctions[J].Journal of Crystal Growth,2000(4):419-422.
[20] 徐伟中,叶志镇,周婷,赵炳辉,朱丽萍,黄靖云.MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J].半导体学报,2005(01):38-41.
[21] Fukumura T;Lin Z;Kawasaki M et al.[J].Applied Physics Letters,2001,78:958.
[22] Ueda K;Tabata H;Kawai T .[J].Applied Physics Letters,2001,79:988.
[23] Park M;Kwon S;Min B .[J].Physical Review B:Condensed Matter,2002,65:161201.
[24] Lee H J;Jeong S Y;Cho C R et al.[J].Applied Physics Letters,2002,81:4020.
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